Novel AlGaAs-GaAs heterojunction bipolar transistors fabricated by two-stage molecular beam epitaxy

Gespeichert in:

Autor*in:	Chen, H.R. [verfasserIn] Chang, C.Y. Tsai, K.L. Tsang, J.S. Lee, C.P.

Format:	Artikel

Erschienen:	1993

Umfang:	4

Übergeordnetes Werk:	Enthalten in: Solid state electronics - Amsterdam [u.a.] : Elsevier, 1960, 36(1993), 4, Seite 485-488
Übergeordnetes Werk:	volume:36 ; year:1993 ; number:4 ; pages:485-488 ; extent:4

Katalog-ID:	OLC170521150X

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title_auth	Novel AlGaAs-GaAs heterojunction bipolar transistors fabricated by two-stage molecular beam epitaxy
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title_short	Novel AlGaAs-GaAs heterojunction bipolar transistors fabricated by two-stage molecular beam epitaxy
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Novel AlGaAs-GaAs heterojunction bipolar transistors fabricated by two-stage molecular beam epitaxy

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