The study of emitter thickness effect on the heterostructure emitter bipolar transistors

Gespeichert in:

Autor*in:	Chen, H.R. [verfasserIn] Lee, C.P. Chang, C.Y. Tsang, J.S. Tsai, K.L.

Format:	Artikel

Erschienen:	1993

Umfang:	5

Übergeordnetes Werk:	Enthalten in: Journal of applied physics - Melville, NY : AIP, 1937, 74(1993), 2, Seite 1398-1402
Übergeordnetes Werk:	volume:74 ; year:1993 ; number:2 ; pages:1398-1402 ; extent:5

Katalog-ID:	OLC1706469470

Internformat


LEADER	01000caa a22002652 4500
001	OLC1706469470
003	DE-627
005	20230708111937.0
007	tu
008	050918s1993 xx \|\|\|\|\| 00\| \|\|und c
035			\|a (DE-627)OLC1706469470
035			\|a (DE-599)GBVOLC1706469470
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
082	0	4	\|a 530
100	1		\|a Chen, H.R. \|e verfasserin \|4 aut
245	1	4	\|a The study of emitter thickness effect on the heterostructure emitter bipolar transistors
264		1	\|c 1993
300			\|a 5
336			\|a Text \|b txt \|2 rdacontent
337			\|a ohne Hilfsmittel zu benutzen \|b n \|2 rdamedia
338			\|a Band \|b nc \|2 rdacarrier
700	1		\|a Lee, C.P. \|4 oth
700	1		\|a Chang, C.Y. \|4 oth
700	1		\|a Tsang, J.S. \|4 oth
700	1		\|a Tsai, K.L. \|4 oth
773	0	8	\|i Enthalten in \|t Journal of applied physics \|d Melville, NY : AIP, 1937 \|g 74(1993), 2, Seite 1398-1402 \|w (DE-627)129079030 \|w (DE-600)3112-4 \|w (DE-576)014411652 \|x 0021-8979 \|7 nnns
773	1	8	\|g volume:74 \|g year:1993 \|g number:2 \|g pages:1398-1402 \|g extent:5
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_OLC
912			\|a SSG-OLC-PHY
912			\|a GBV_ILN_11
912			\|a GBV_ILN_20
912			\|a GBV_ILN_22
912			\|a GBV_ILN_23
912			\|a GBV_ILN_24
912			\|a GBV_ILN_30
912			\|a GBV_ILN_31
912			\|a GBV_ILN_32
912			\|a GBV_ILN_40
912			\|a GBV_ILN_59
912			\|a GBV_ILN_62
912			\|a GBV_ILN_70
912			\|a GBV_ILN_130
912			\|a GBV_ILN_136
912			\|a GBV_ILN_150
912			\|a GBV_ILN_170
912			\|a GBV_ILN_193
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2006
912			\|a GBV_ILN_2010
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2185
912			\|a GBV_ILN_2221
912			\|a GBV_ILN_2279
912			\|a GBV_ILN_2409
912			\|a GBV_ILN_4012
912			\|a GBV_ILN_4082
912			\|a GBV_ILN_4126
912			\|a GBV_ILN_4193
912			\|a GBV_ILN_4306
912			\|a GBV_ILN_4307
912			\|a GBV_ILN_4310
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4318
912			\|a GBV_ILN_4319
912			\|a GBV_ILN_4323
912			\|a GBV_ILN_4336
912			\|a GBV_ILN_4700
951			\|a AR
952			\|d 74 \|j 1993 \|e 2 \|h 1398-1402 \|g 5

Indexfelder

author_variant	h c hc
matchkey_str	article:00218979:1993----::hsuyfmtetikesfetnhhtrsrcuemt
hierarchy_sort_str	1993
publishDate	1993
allfields	(DE-627)OLC1706469470 (DE-599)GBVOLC1706469470 DE-627 ger DE-627 rakwb 530 Chen, H.R. verfasserin aut The study of emitter thickness effect on the heterostructure emitter bipolar transistors 1993 5 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Lee, C.P. oth Chang, C.Y. oth Tsang, J.S. oth Tsai, K.L. oth Enthalten in Journal of applied physics Melville, NY : AIP, 1937 74(1993), 2, Seite 1398-1402 (DE-627)129079030 (DE-600)3112-4 (DE-576)014411652 0021-8979 nnns volume:74 year:1993 number:2 pages:1398-1402 extent:5 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_136 GBV_ILN_150 GBV_ILN_170 GBV_ILN_193 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_2185 GBV_ILN_2221 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4012 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4193 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4336 GBV_ILN_4700 AR 74 1993 2 1398-1402 5
spelling	(DE-627)OLC1706469470 (DE-599)GBVOLC1706469470 DE-627 ger DE-627 rakwb 530 Chen, H.R. verfasserin aut The study of emitter thickness effect on the heterostructure emitter bipolar transistors 1993 5 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Lee, C.P. oth Chang, C.Y. oth Tsang, J.S. oth Tsai, K.L. oth Enthalten in Journal of applied physics Melville, NY : AIP, 1937 74(1993), 2, Seite 1398-1402 (DE-627)129079030 (DE-600)3112-4 (DE-576)014411652 0021-8979 nnns volume:74 year:1993 number:2 pages:1398-1402 extent:5 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_136 GBV_ILN_150 GBV_ILN_170 GBV_ILN_193 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_2185 GBV_ILN_2221 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4012 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4193 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4336 GBV_ILN_4700 AR 74 1993 2 1398-1402 5
allfields_unstemmed	(DE-627)OLC1706469470 (DE-599)GBVOLC1706469470 DE-627 ger DE-627 rakwb 530 Chen, H.R. verfasserin aut The study of emitter thickness effect on the heterostructure emitter bipolar transistors 1993 5 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Lee, C.P. oth Chang, C.Y. oth Tsang, J.S. oth Tsai, K.L. oth Enthalten in Journal of applied physics Melville, NY : AIP, 1937 74(1993), 2, Seite 1398-1402 (DE-627)129079030 (DE-600)3112-4 (DE-576)014411652 0021-8979 nnns volume:74 year:1993 number:2 pages:1398-1402 extent:5 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_136 GBV_ILN_150 GBV_ILN_170 GBV_ILN_193 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_2185 GBV_ILN_2221 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4012 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4193 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4336 GBV_ILN_4700 AR 74 1993 2 1398-1402 5
allfieldsGer	(DE-627)OLC1706469470 (DE-599)GBVOLC1706469470 DE-627 ger DE-627 rakwb 530 Chen, H.R. verfasserin aut The study of emitter thickness effect on the heterostructure emitter bipolar transistors 1993 5 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Lee, C.P. oth Chang, C.Y. oth Tsang, J.S. oth Tsai, K.L. oth Enthalten in Journal of applied physics Melville, NY : AIP, 1937 74(1993), 2, Seite 1398-1402 (DE-627)129079030 (DE-600)3112-4 (DE-576)014411652 0021-8979 nnns volume:74 year:1993 number:2 pages:1398-1402 extent:5 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_136 GBV_ILN_150 GBV_ILN_170 GBV_ILN_193 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_2185 GBV_ILN_2221 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4012 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4193 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4336 GBV_ILN_4700 AR 74 1993 2 1398-1402 5
allfieldsSound	(DE-627)OLC1706469470 (DE-599)GBVOLC1706469470 DE-627 ger DE-627 rakwb 530 Chen, H.R. verfasserin aut The study of emitter thickness effect on the heterostructure emitter bipolar transistors 1993 5 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Lee, C.P. oth Chang, C.Y. oth Tsang, J.S. oth Tsai, K.L. oth Enthalten in Journal of applied physics Melville, NY : AIP, 1937 74(1993), 2, Seite 1398-1402 (DE-627)129079030 (DE-600)3112-4 (DE-576)014411652 0021-8979 nnns volume:74 year:1993 number:2 pages:1398-1402 extent:5 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_136 GBV_ILN_150 GBV_ILN_170 GBV_ILN_193 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_2185 GBV_ILN_2221 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4012 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4193 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4336 GBV_ILN_4700 AR 74 1993 2 1398-1402 5
source	Enthalten in Journal of applied physics 74(1993), 2, Seite 1398-1402 volume:74 year:1993 number:2 pages:1398-1402 extent:5
sourceStr	Enthalten in Journal of applied physics 74(1993), 2, Seite 1398-1402 volume:74 year:1993 number:2 pages:1398-1402 extent:5
format_phy_str_mv	Article
institution	findex.gbv.de
dewey-raw	530
isfreeaccess_bool	false
container_title	Journal of applied physics
authorswithroles_txt_mv	Chen, H.R. @@aut@@ Lee, C.P. @@oth@@ Chang, C.Y. @@oth@@ Tsang, J.S. @@oth@@ Tsai, K.L. @@oth@@
publishDateDaySort_date	1993-01-01T00:00:00Z
hierarchy_top_id	129079030
dewey-sort	3530
id	OLC1706469470
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC1706469470</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230708111937.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">050918s1993 xx \|\|\|\|\| 00\| \|\|und c</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1706469470</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1706469470</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Chen, H.R.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="4"><subfield code="a">The study of emitter thickness effect on the heterostructure emitter bipolar transistors</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1993</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">5</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Lee, C.P.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Chang, C.Y.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Tsang, J.S.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Tsai, K.L.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of applied physics</subfield><subfield code="d">Melville, NY : AIP, 1937</subfield><subfield code="g">74(1993), 2, Seite 1398-1402</subfield><subfield code="w">(DE-627)129079030</subfield><subfield code="w">(DE-600)3112-4</subfield><subfield code="w">(DE-576)014411652</subfield><subfield code="x">0021-8979</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:74</subfield><subfield code="g">year:1993</subfield><subfield code="g">number:2</subfield><subfield code="g">pages:1398-1402</subfield><subfield code="g">extent:5</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_11</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_30</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_59</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_130</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_136</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_193</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2010</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2185</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2221</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2279</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2409</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4082</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4193</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4310</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4318</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4319</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">74</subfield><subfield code="j">1993</subfield><subfield code="e">2</subfield><subfield code="h">1398-1402</subfield><subfield code="g">5</subfield></datafield></record></collection>
author	Chen, H.R.
spellingShingle	Chen, H.R. ddc 530 The study of emitter thickness effect on the heterostructure emitter bipolar transistors
authorStr	Chen, H.R.
ppnlink_with_tag_str_mv	@@773@@(DE-627)129079030
format	Article
dewey-ones	530 - Physics
delete_txt_mv	keep
author_role	aut
collection	OLC
remote_str	false
illustrated	Not Illustrated
issn	0021-8979
topic_title	530 The study of emitter thickness effect on the heterostructure emitter bipolar transistors
topic	ddc 530
topic_unstemmed	ddc 530
topic_browse	ddc 530
format_facet	Aufsätze Gedruckte Aufsätze
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	nc
author2_variant	c l cl c c cc j t jt k t kt
hierarchy_parent_title	Journal of applied physics
hierarchy_parent_id	129079030
dewey-tens	530 - Physics
hierarchy_top_title	Journal of applied physics
isfreeaccess_txt	false
familylinks_str_mv	(DE-627)129079030 (DE-600)3112-4 (DE-576)014411652
title	The study of emitter thickness effect on the heterostructure emitter bipolar transistors
ctrlnum	(DE-627)OLC1706469470 (DE-599)GBVOLC1706469470
title_full	The study of emitter thickness effect on the heterostructure emitter bipolar transistors
author_sort	Chen, H.R.
journal	Journal of applied physics
journalStr	Journal of applied physics
isOA_bool	false
dewey-hundreds	500 - Science
recordtype	marc
publishDateSort	1993
contenttype_str_mv	txt
container_start_page	1398
author_browse	Chen, H.R.
container_volume	74
physical	5
class	530
format_se	Aufsätze
author-letter	Chen, H.R.
dewey-full	530
title_sort	study of emitter thickness effect on the heterostructure emitter bipolar transistors
title_auth	The study of emitter thickness effect on the heterostructure emitter bipolar transistors
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_136 GBV_ILN_150 GBV_ILN_170 GBV_ILN_193 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_2185 GBV_ILN_2221 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4012 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4193 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4336 GBV_ILN_4700
container_issue	2
title_short	The study of emitter thickness effect on the heterostructure emitter bipolar transistors
remote_bool	false
author2	Lee, C.P. Chang, C.Y. Tsang, J.S. Tsai, K.L.
author2Str	Lee, C.P. Chang, C.Y. Tsang, J.S. Tsai, K.L.
ppnlink	129079030
mediatype_str_mv	n
isOA_txt	false
hochschulschrift_bool	false
author2_role	oth oth oth oth
up_date	2024-07-03T16:27:35.812Z
_version_	1803575944352366592
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC1706469470</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230708111937.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">050918s1993 xx \|\|\|\|\| 00\| \|\|und c</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1706469470</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1706469470</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Chen, H.R.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="4"><subfield code="a">The study of emitter thickness effect on the heterostructure emitter bipolar transistors</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1993</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">5</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Lee, C.P.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Chang, C.Y.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Tsang, J.S.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Tsai, K.L.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of applied physics</subfield><subfield code="d">Melville, NY : AIP, 1937</subfield><subfield code="g">74(1993), 2, Seite 1398-1402</subfield><subfield code="w">(DE-627)129079030</subfield><subfield code="w">(DE-600)3112-4</subfield><subfield code="w">(DE-576)014411652</subfield><subfield code="x">0021-8979</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:74</subfield><subfield code="g">year:1993</subfield><subfield code="g">number:2</subfield><subfield code="g">pages:1398-1402</subfield><subfield code="g">extent:5</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_11</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_30</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_59</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_130</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_136</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_193</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2010</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2185</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2221</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2279</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2409</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4082</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4193</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4310</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4318</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4319</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">74</subfield><subfield code="j">1993</subfield><subfield code="e">2</subfield><subfield code="h">1398-1402</subfield><subfield code="g">5</subfield></datafield></record></collection>
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