Observation of Very High Peak-to-Valley Current Ratio (>= 9.4) in Amorphous Silicon-Silicon-Carbide Double Barrier Structure with Barrier Enhancement Layer

Gespeichert in:

Autor*in:	Fang, Y.K. [verfasserIn] Chen, K.-H. Liu, C.-R. Hwang, J.-D. Wu, K.-S. Liou, W.-R.

Format:	Artikel

Erschienen:	1994

Umfang:	4

Übergeordnetes Werk:	Enthalten in: IEEE journal of quantum electronics - New York, NY : IEEE, 1965, 30(1994), 10, Seite 2293-2296
Übergeordnetes Werk:	volume:30 ; year:1994 ; number:10 ; pages:2293-2296 ; extent:4

Katalog-ID:	OLC1713797194

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allfieldsSound	(DE-627)OLC1713797194 (DE-599)GBVOLC1713797194 DE-627 ger DE-627 rakwb 620 Fang, Y.K. verfasserin aut Observation of Very High Peak-to-Valley Current Ratio (>= 9.4) in Amorphous Silicon-Silicon-Carbide Double Barrier Structure with Barrier Enhancement Layer 1994 4 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Chen, K.-H. oth Liu, C.-R. oth Hwang, J.-D. oth Wu, K.-S. oth Liou, W.-R. oth Enthalten in IEEE journal of quantum electronics New York, NY : IEEE, 1965 30(1994), 10, Seite 2293-2296 (DE-627)12960299X (DE-600)241641-4 (DE-576)015096807 0018-9197 nnns volume:30 year:1994 number:10 pages:2293-2296 extent:4 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_62 GBV_ILN_70 GBV_ILN_100 GBV_ILN_120 GBV_ILN_130 GBV_ILN_170 GBV_ILN_285 GBV_ILN_602 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2016 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_4027 GBV_ILN_4035 GBV_ILN_4038 GBV_ILN_4046 GBV_ILN_4266 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4309 GBV_ILN_4310 GBV_ILN_4314 GBV_ILN_4315 GBV_ILN_4316 GBV_ILN_4317 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 30 1994 10 2293-2296 4
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author	Fang, Y.K.
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title	Observation of Very High Peak-to-Valley Current Ratio (>= 9.4) in Amorphous Silicon-Silicon-Carbide Double Barrier Structure with Barrier Enhancement Layer
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title_full	Observation of Very High Peak-to-Valley Current Ratio (>= 9.4) in Amorphous Silicon-Silicon-Carbide Double Barrier Structure with Barrier Enhancement Layer
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title_sort	observation of very high peak-to-valley current ratio (>= 9.4) in amorphous silicon-silicon-carbide double barrier structure with barrier enhancement layer
title_auth	Observation of Very High Peak-to-Valley Current Ratio (>= 9.4) in Amorphous Silicon-Silicon-Carbide Double Barrier Structure with Barrier Enhancement Layer
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title_short	Observation of Very High Peak-to-Valley Current Ratio (>= 9.4) in Amorphous Silicon-Silicon-Carbide Double Barrier Structure with Barrier Enhancement Layer
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author2	Chen, K.-H. Liu, C.-R. Hwang, J.-D. Wu, K.-S. Liou, W.-R.
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Observation of Very High Peak-to-Valley Current Ratio (>= 9.4) in Amorphous Silicon-Silicon-Carbide Double Barrier Structure with Barrier Enhancement Layer

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