Self-Aligned InAlAs-In GaAs Heterojunction Bipolar Transistor with a Buried Subcollector Grown by Selective Epitaxy

Gespeichert in:

Autor*in:	Song, J.-I. [verfasserIn] Frei, M.R. Hayes, J.R. Bhat, R. Cox, H.M.

Format:	Artikel

Erschienen:	1994

Umfang:	3

Übergeordnetes Werk:	Enthalten in: IEEE electron device letters - New York, NY : IEEE, 1980, 15(1994), 4, Seite 123-125
Übergeordnetes Werk:	volume:15 ; year:1994 ; number:4 ; pages:123-125 ; extent:3

Katalog-ID:	OLC171398430X

Internformat


LEADER	01000caa a22002652 4500
001	OLC171398430X
003	DE-627
005	20230708153044.0
007	tu
008	950722s1994 xx \|\|\|\|\| 00\| \|\|und c
035			\|a (DE-627)OLC171398430X
035			\|a (DE-599)GBVOLC171398430X
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
082	0	4	\|a 620
100	1		\|a Song, J.-I. \|e verfasserin \|4 aut
245	1	0	\|a Self-Aligned InAlAs-In GaAs Heterojunction Bipolar Transistor with a Buried Subcollector Grown by Selective Epitaxy
264		1	\|c 1994
300			\|a 3
336			\|a Text \|b txt \|2 rdacontent
337			\|a ohne Hilfsmittel zu benutzen \|b n \|2 rdamedia
338			\|a Band \|b nc \|2 rdacarrier
700	1		\|a Frei, M.R. \|4 oth
700	1		\|a Hayes, J.R. \|4 oth
700	1		\|a Bhat, R. \|4 oth
700	1		\|a Cox, H.M. \|4 oth
773	0	8	\|i Enthalten in \|t IEEE electron device letters \|d New York, NY : IEEE, 1980 \|g 15(1994), 4, Seite 123-125 \|w (DE-627)129618993 \|w (DE-600)245158-X \|w (DE-576)015122115 \|x 0193-8576 \|7 nnns
773	1	8	\|g volume:15 \|g year:1994 \|g number:4 \|g pages:123-125 \|g extent:3
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_OLC
912			\|a SSG-OLC-TEC
912			\|a GBV_ILN_11
912			\|a GBV_ILN_20
912			\|a GBV_ILN_22
912			\|a GBV_ILN_23
912			\|a GBV_ILN_24
912			\|a GBV_ILN_32
912			\|a GBV_ILN_70
912			\|a GBV_ILN_100
912			\|a GBV_ILN_170
912			\|a GBV_ILN_2002
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2006
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2016
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_4036
912			\|a GBV_ILN_4046
912			\|a GBV_ILN_4126
912			\|a GBV_ILN_4266
912			\|a GBV_ILN_4306
912			\|a GBV_ILN_4307
912			\|a GBV_ILN_4309
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4314
912			\|a GBV_ILN_4315
912			\|a GBV_ILN_4317
912			\|a GBV_ILN_4318
912			\|a GBV_ILN_4319
912			\|a GBV_ILN_4700
951			\|a AR
952			\|d 15 \|j 1994 \|e 4 \|h 123-125 \|g 3

Indexfelder

author_variant	j i s jis
matchkey_str	article:01938576:1994----::eflgeiaaigahtrjntobplrrnitrihbresbolc
hierarchy_sort_str	1994
publishDate	1994
allfields	(DE-627)OLC171398430X (DE-599)GBVOLC171398430X DE-627 ger DE-627 rakwb 620 Song, J.-I. verfasserin aut Self-Aligned InAlAs-In GaAs Heterojunction Bipolar Transistor with a Buried Subcollector Grown by Selective Epitaxy 1994 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Frei, M.R. oth Hayes, J.R. oth Bhat, R. oth Cox, H.M. oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 15(1994), 4, Seite 123-125 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:15 year:1994 number:4 pages:123-125 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_32 GBV_ILN_70 GBV_ILN_100 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2016 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2061 GBV_ILN_4036 GBV_ILN_4046 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4309 GBV_ILN_4313 GBV_ILN_4314 GBV_ILN_4315 GBV_ILN_4317 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 AR 15 1994 4 123-125 3
spelling	(DE-627)OLC171398430X (DE-599)GBVOLC171398430X DE-627 ger DE-627 rakwb 620 Song, J.-I. verfasserin aut Self-Aligned InAlAs-In GaAs Heterojunction Bipolar Transistor with a Buried Subcollector Grown by Selective Epitaxy 1994 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Frei, M.R. oth Hayes, J.R. oth Bhat, R. oth Cox, H.M. oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 15(1994), 4, Seite 123-125 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:15 year:1994 number:4 pages:123-125 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_32 GBV_ILN_70 GBV_ILN_100 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2016 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2061 GBV_ILN_4036 GBV_ILN_4046 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4309 GBV_ILN_4313 GBV_ILN_4314 GBV_ILN_4315 GBV_ILN_4317 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 AR 15 1994 4 123-125 3
allfields_unstemmed	(DE-627)OLC171398430X (DE-599)GBVOLC171398430X DE-627 ger DE-627 rakwb 620 Song, J.-I. verfasserin aut Self-Aligned InAlAs-In GaAs Heterojunction Bipolar Transistor with a Buried Subcollector Grown by Selective Epitaxy 1994 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Frei, M.R. oth Hayes, J.R. oth Bhat, R. oth Cox, H.M. oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 15(1994), 4, Seite 123-125 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:15 year:1994 number:4 pages:123-125 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_32 GBV_ILN_70 GBV_ILN_100 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2016 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2061 GBV_ILN_4036 GBV_ILN_4046 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4309 GBV_ILN_4313 GBV_ILN_4314 GBV_ILN_4315 GBV_ILN_4317 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 AR 15 1994 4 123-125 3
allfieldsGer	(DE-627)OLC171398430X (DE-599)GBVOLC171398430X DE-627 ger DE-627 rakwb 620 Song, J.-I. verfasserin aut Self-Aligned InAlAs-In GaAs Heterojunction Bipolar Transistor with a Buried Subcollector Grown by Selective Epitaxy 1994 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Frei, M.R. oth Hayes, J.R. oth Bhat, R. oth Cox, H.M. oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 15(1994), 4, Seite 123-125 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:15 year:1994 number:4 pages:123-125 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_32 GBV_ILN_70 GBV_ILN_100 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2016 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2061 GBV_ILN_4036 GBV_ILN_4046 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4309 GBV_ILN_4313 GBV_ILN_4314 GBV_ILN_4315 GBV_ILN_4317 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 AR 15 1994 4 123-125 3
allfieldsSound	(DE-627)OLC171398430X (DE-599)GBVOLC171398430X DE-627 ger DE-627 rakwb 620 Song, J.-I. verfasserin aut Self-Aligned InAlAs-In GaAs Heterojunction Bipolar Transistor with a Buried Subcollector Grown by Selective Epitaxy 1994 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Frei, M.R. oth Hayes, J.R. oth Bhat, R. oth Cox, H.M. oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 15(1994), 4, Seite 123-125 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:15 year:1994 number:4 pages:123-125 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_32 GBV_ILN_70 GBV_ILN_100 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2016 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2061 GBV_ILN_4036 GBV_ILN_4046 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4309 GBV_ILN_4313 GBV_ILN_4314 GBV_ILN_4315 GBV_ILN_4317 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 AR 15 1994 4 123-125 3
source	Enthalten in IEEE electron device letters 15(1994), 4, Seite 123-125 volume:15 year:1994 number:4 pages:123-125 extent:3
sourceStr	Enthalten in IEEE electron device letters 15(1994), 4, Seite 123-125 volume:15 year:1994 number:4 pages:123-125 extent:3
format_phy_str_mv	Article
institution	findex.gbv.de
dewey-raw	620
isfreeaccess_bool	false
container_title	IEEE electron device letters
authorswithroles_txt_mv	Song, J.-I. @@aut@@ Frei, M.R. @@oth@@ Hayes, J.R. @@oth@@ Bhat, R. @@oth@@ Cox, H.M. @@oth@@
publishDateDaySort_date	1994-01-01T00:00:00Z
hierarchy_top_id	129618993
dewey-sort	3620
id	OLC171398430X
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC171398430X</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230708153044.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">950722s1994 xx \|\|\|\|\| 00\| \|\|und c</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC171398430X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC171398430X</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">620</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Song, J.-I.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Self-Aligned InAlAs-In GaAs Heterojunction Bipolar Transistor with a Buried Subcollector Grown by Selective Epitaxy</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1994</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">3</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Frei, M.R.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hayes, J.R.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Bhat, R.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Cox, H.M.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">IEEE electron device letters</subfield><subfield code="d">New York, NY : IEEE, 1980</subfield><subfield code="g">15(1994), 4, Seite 123-125</subfield><subfield code="w">(DE-627)129618993</subfield><subfield code="w">(DE-600)245158-X</subfield><subfield code="w">(DE-576)015122115</subfield><subfield code="x">0193-8576</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:15</subfield><subfield code="g">year:1994</subfield><subfield code="g">number:4</subfield><subfield code="g">pages:123-125</subfield><subfield code="g">extent:3</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_11</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2002</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2016</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4036</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4046</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4266</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4309</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4314</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4315</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4317</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4318</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4319</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">15</subfield><subfield code="j">1994</subfield><subfield code="e">4</subfield><subfield code="h">123-125</subfield><subfield code="g">3</subfield></datafield></record></collection>
author	Song, J.-I.
spellingShingle	Song, J.-I. ddc 620 Self-Aligned InAlAs-In GaAs Heterojunction Bipolar Transistor with a Buried Subcollector Grown by Selective Epitaxy
authorStr	Song, J.-I.
ppnlink_with_tag_str_mv	@@773@@(DE-627)129618993
format	Article
dewey-ones	620 - Engineering & allied operations
delete_txt_mv	keep
author_role	aut
collection	OLC
remote_str	false
illustrated	Not Illustrated
issn	0193-8576
topic_title	620 Self-Aligned InAlAs-In GaAs Heterojunction Bipolar Transistor with a Buried Subcollector Grown by Selective Epitaxy
topic	ddc 620
topic_unstemmed	ddc 620
topic_browse	ddc 620
format_facet	Aufsätze Gedruckte Aufsätze
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	nc
author2_variant	m f mf j h jh r b rb h c hc
hierarchy_parent_title	IEEE electron device letters
hierarchy_parent_id	129618993
dewey-tens	620 - Engineering
hierarchy_top_title	IEEE electron device letters
isfreeaccess_txt	false
familylinks_str_mv	(DE-627)129618993 (DE-600)245158-X (DE-576)015122115
title	Self-Aligned InAlAs-In GaAs Heterojunction Bipolar Transistor with a Buried Subcollector Grown by Selective Epitaxy
ctrlnum	(DE-627)OLC171398430X (DE-599)GBVOLC171398430X
title_full	Self-Aligned InAlAs-In GaAs Heterojunction Bipolar Transistor with a Buried Subcollector Grown by Selective Epitaxy
author_sort	Song, J.-I.
journal	IEEE electron device letters
journalStr	IEEE electron device letters
isOA_bool	false
dewey-hundreds	600 - Technology
recordtype	marc
publishDateSort	1994
contenttype_str_mv	txt
container_start_page	123
author_browse	Song, J.-I.
container_volume	15
physical	3
class	620
format_se	Aufsätze
author-letter	Song, J.-I.
dewey-full	620
title_sort	self-aligned inalas-in gaas heterojunction bipolar transistor with a buried subcollector grown by selective epitaxy
title_auth	Self-Aligned InAlAs-In GaAs Heterojunction Bipolar Transistor with a Buried Subcollector Grown by Selective Epitaxy
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_32 GBV_ILN_70 GBV_ILN_100 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2016 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2061 GBV_ILN_4036 GBV_ILN_4046 GBV_ILN_4126 GBV_ILN_4266 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4309 GBV_ILN_4313 GBV_ILN_4314 GBV_ILN_4315 GBV_ILN_4317 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700
container_issue	4
title_short	Self-Aligned InAlAs-In GaAs Heterojunction Bipolar Transistor with a Buried Subcollector Grown by Selective Epitaxy
remote_bool	false
author2	Frei, M.R. Hayes, J.R. Bhat, R. Cox, H.M.
author2Str	Frei, M.R. Hayes, J.R. Bhat, R. Cox, H.M.
ppnlink	129618993
mediatype_str_mv	n
isOA_txt	false
hochschulschrift_bool	false
author2_role	oth oth oth oth
up_date	2024-07-03T20:52:32.916Z
_version_	1803592613668847616
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC171398430X</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230708153044.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">950722s1994 xx \|\|\|\|\| 00\| \|\|und c</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC171398430X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC171398430X</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">620</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Song, J.-I.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Self-Aligned InAlAs-In GaAs Heterojunction Bipolar Transistor with a Buried Subcollector Grown by Selective Epitaxy</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1994</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">3</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Frei, M.R.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hayes, J.R.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Bhat, R.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Cox, H.M.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">IEEE electron device letters</subfield><subfield code="d">New York, NY : IEEE, 1980</subfield><subfield code="g">15(1994), 4, Seite 123-125</subfield><subfield code="w">(DE-627)129618993</subfield><subfield code="w">(DE-600)245158-X</subfield><subfield code="w">(DE-576)015122115</subfield><subfield code="x">0193-8576</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:15</subfield><subfield code="g">year:1994</subfield><subfield code="g">number:4</subfield><subfield code="g">pages:123-125</subfield><subfield code="g">extent:3</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_11</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2002</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2016</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4036</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4046</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4266</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4309</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4314</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4315</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4317</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4318</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4319</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">15</subfield><subfield code="j">1994</subfield><subfield code="e">4</subfield><subfield code="h">123-125</subfield><subfield code="g">3</subfield></datafield></record></collection>
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