Annealing effects on hydrogen passivation of Zn acceptors in AlGaInP with p-GaAs cap layer grown by metalorganic vapor phase epitaxy
Autor*in: |
Ishibashi, A. [verfasserIn] |
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Format: |
Artikel |
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Erschienen: |
1994 |
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Umfang: |
6 |
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Übergeordnetes Werk: |
Enthalten in: Journal of crystal growth - Amsterdam [u.a.] : Elsevier, 1967, 145(1994), 1-4, Seite 414-419 |
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Übergeordnetes Werk: |
volume:145 ; year:1994 ; number:1-4 ; pages:414-419 ; extent:6 |
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