Compositional plane of a wide-gap semiconductor CaCdSeS lattice-matched to InP and GaAs
Autor*in: |
Abe, S. [verfasserIn] |
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Format: |
Artikel |
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Erschienen: |
2006 |
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Umfang: |
4 |
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Übergeordnetes Werk: |
Enthalten in: Journal of crystal growth - Amsterdam [u.a.] : Elsevier, 1967, 290(2006), 2, Seite 388-391 |
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Übergeordnetes Werk: |
volume:290 ; year:2006 ; number:2 ; pages:388-391 ; extent:4 |
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