Semiconductors II: Surfaces, interfaces, microstructures, and related topics - Unified model of fractal conductance fluctuations for diffusive and ballistic semiconductor devices (7 pages)

Gespeichert in:

Autor*in:	Marlow, C.A. [verfasserIn] Taylor, R.P. Martin, T.P. Scannell, B.C. Linke, H. Fairbanks, M.S. Hall, G.D.R. Shorubalko, I. Samuelson, L. Fromhold, T.M. Brown, C.V. Hackens, B. Faniel, S. Gustin, C. Bayot, V. Wallart, X. Bollaert, S. Cappy, A.

Format:	Artikel

Erschienen:	2006

Systematik:	UA 6500.

Umfang:	1

Übergeordnetes Werk:	Enthalten in: Physical review / B - Ridge, NY : APS, 1970, 73(2006), 19, Seite 195318
Übergeordnetes Werk:	volume:73 ; year:2006 ; number:19 ; pages:195318 ; extent:1

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allfields	sw060719 (DE-627)OLC1721504001 (DE-599)GBVOLC1721504001 DE-627 ger DE-627 rakwb 530 UA 6500. AVZ rvk Marlow, C.A. verfasserin aut Semiconductors II: Surfaces, interfaces, microstructures, and related topics - Unified model of fractal conductance fluctuations for diffusive and ballistic semiconductor devices (7 pages) 2006 1 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Taylor, R.P. oth Martin, T.P. oth Scannell, B.C. oth Linke, H. oth Fairbanks, M.S. oth Hall, G.D.R. oth Shorubalko, I. oth Samuelson, L. oth Fromhold, T.M. oth Brown, C.V. oth Hackens, B. oth Faniel, S. oth Gustin, C. oth Bayot, V. oth Wallart, X. oth Bollaert, S. oth Cappy, A. oth Enthalten in Physical review / B Ridge, NY : APS, 1970 73(2006), 19, Seite 195318 (DE-627)129508640 (DE-600)209770-9 (DE-576)014914921 2469-9950 nnns volume:73 year:2006 number:19 pages:195318 extent:1 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_1 GBV_ILN_11 GBV_ILN_21 GBV_ILN_22 GBV_ILN_31 GBV_ILN_40 GBV_ILN_59 GBV_ILN_62 GBV_ILN_70 GBV_ILN_100 GBV_ILN_130 GBV_ILN_170 GBV_ILN_285 GBV_ILN_2004 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_2016 GBV_ILN_2020 GBV_ILN_2185 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4266 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4310 GBV_ILN_4314 GBV_ILN_4317 GBV_ILN_4318 GBV_ILN_4323 GBV_ILN_4700 UA 6500. AR 73 2006 19 195318 1
spelling	sw060719 (DE-627)OLC1721504001 (DE-599)GBVOLC1721504001 DE-627 ger DE-627 rakwb 530 UA 6500. AVZ rvk Marlow, C.A. verfasserin aut Semiconductors II: Surfaces, interfaces, microstructures, and related topics - Unified model of fractal conductance fluctuations for diffusive and ballistic semiconductor devices (7 pages) 2006 1 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Taylor, R.P. oth Martin, T.P. oth Scannell, B.C. oth Linke, H. oth Fairbanks, M.S. oth Hall, G.D.R. oth Shorubalko, I. oth Samuelson, L. oth Fromhold, T.M. oth Brown, C.V. oth Hackens, B. oth Faniel, S. oth Gustin, C. oth Bayot, V. oth Wallart, X. oth Bollaert, S. oth Cappy, A. oth Enthalten in Physical review / B Ridge, NY : APS, 1970 73(2006), 19, Seite 195318 (DE-627)129508640 (DE-600)209770-9 (DE-576)014914921 2469-9950 nnns volume:73 year:2006 number:19 pages:195318 extent:1 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_1 GBV_ILN_11 GBV_ILN_21 GBV_ILN_22 GBV_ILN_31 GBV_ILN_40 GBV_ILN_59 GBV_ILN_62 GBV_ILN_70 GBV_ILN_100 GBV_ILN_130 GBV_ILN_170 GBV_ILN_285 GBV_ILN_2004 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_2016 GBV_ILN_2020 GBV_ILN_2185 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4266 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4310 GBV_ILN_4314 GBV_ILN_4317 GBV_ILN_4318 GBV_ILN_4323 GBV_ILN_4700 UA 6500. AR 73 2006 19 195318 1
allfields_unstemmed	sw060719 (DE-627)OLC1721504001 (DE-599)GBVOLC1721504001 DE-627 ger DE-627 rakwb 530 UA 6500. AVZ rvk Marlow, C.A. verfasserin aut Semiconductors II: Surfaces, interfaces, microstructures, and related topics - Unified model of fractal conductance fluctuations for diffusive and ballistic semiconductor devices (7 pages) 2006 1 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Taylor, R.P. oth Martin, T.P. oth Scannell, B.C. oth Linke, H. oth Fairbanks, M.S. oth Hall, G.D.R. oth Shorubalko, I. oth Samuelson, L. oth Fromhold, T.M. oth Brown, C.V. oth Hackens, B. oth Faniel, S. oth Gustin, C. oth Bayot, V. oth Wallart, X. oth Bollaert, S. oth Cappy, A. oth Enthalten in Physical review / B Ridge, NY : APS, 1970 73(2006), 19, Seite 195318 (DE-627)129508640 (DE-600)209770-9 (DE-576)014914921 2469-9950 nnns volume:73 year:2006 number:19 pages:195318 extent:1 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_1 GBV_ILN_11 GBV_ILN_21 GBV_ILN_22 GBV_ILN_31 GBV_ILN_40 GBV_ILN_59 GBV_ILN_62 GBV_ILN_70 GBV_ILN_100 GBV_ILN_130 GBV_ILN_170 GBV_ILN_285 GBV_ILN_2004 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_2016 GBV_ILN_2020 GBV_ILN_2185 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4266 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4310 GBV_ILN_4314 GBV_ILN_4317 GBV_ILN_4318 GBV_ILN_4323 GBV_ILN_4700 UA 6500. AR 73 2006 19 195318 1
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title_sort	semiconductors ii: surfaces, interfaces, microstructures, and related topics - unified model of fractal conductance fluctuations for diffusive and ballistic semiconductor devices (7 pages)
title_auth	Semiconductors II: Surfaces, interfaces, microstructures, and related topics - Unified model of fractal conductance fluctuations for diffusive and ballistic semiconductor devices (7 pages)
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