Annealing behavior of oxygen in-diffusion from SiO2 film to silicon substrate

Gespeichert in:

Autor*in:	Abe, T. [verfasserIn] Yamada-Kaneta, H.

Format:	Artikel

Erschienen:	2004

Umfang:	7

Übergeordnetes Werk:	Enthalten in: Journal of applied physics - Melville, NY : AIP, 1937, 96(2004), 8, Seite 4143-4149
Übergeordnetes Werk:	volume:96 ; year:2004 ; number:8 ; pages:4143-4149 ; extent:7

Katalog-ID:	OLC1729720692

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Annealing behavior of oxygen in-diffusion from SiO2 film to silicon substrate

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