Charge-collection efficiency of heavily irradiated silicon diodes operated with an increased free-carrier concentration and under forward bias

Gespeichert in:

Autor*in:	Mandic, I. [verfasserIn] Cindro, V. Kramberger, G. Mikuz, M. Zavrtanik, M.

Format:	Artikel

Erschienen:	2004

Systematik:	UA 5680.

Umfang:	12

Übergeordnetes Werk:	Enthalten in: Nuclear instruments & methods in physics research / A - Amsterdam : North-Holland Publ. Co., 1984, 533(2004), 3, Seite 442-453
Übergeordnetes Werk:	volume:533 ; year:2004 ; number:3 ; pages:442-453 ; extent:12

Katalog-ID:	OLC1732467080

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