In situ measurements of strains and stresses in GaN heteroepitaxy and its impact on growth temperature

Gespeichert in:

Autor*in:	Dadgar, A. [verfasserIn] Schulze, F. Zettler, T. Haberland, K. Clos, R. Strassburger, G. Bläsing, J. Diez, A. Krost, A.

Format:	Artikel

Erschienen:	2004

Umfang:	4

Übergeordnetes Werk:	Enthalten in: Journal of crystal growth - Amsterdam [u.a.] : Elsevier, 1967, 272(2004), 1-4, Seite 72-75
Übergeordnetes Werk:	volume:272 ; year:2004 ; number:1-4 ; pages:72-75 ; extent:4

Katalog-ID:	OLC1733964126

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In situ measurements of strains and stresses in GaN heteroepitaxy and its impact on growth temperature

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