Semiconductor Devices, Materials, and Processing - Evolution of Surface Topography of as-Grown Si Film near Amorphous-to-Polycrystalline Transition

Gespeichert in:

Autor*in:	Edrei, R. [verfasserIn] Shima, R. Gridin, V.V. Roizin, Y. Kaplan, W.D. Hoffman, A.

Format:	Artikel

Erschienen:	2004

Systematik:	VA 4000

Übergeordnetes Werk:	Enthalten in: Journal of the Electrochemical Society - Pennington, NJ : Electrochemical Society, 1948, 151(2004), 12, Seite G904
Übergeordnetes Werk:	volume:151 ; year:2004 ; number:12 ; pages:G904

Katalog-ID:	OLC1734011513

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