A Compact Charge Ratio Expression for the Emitter Delay of Polysilicon Emitter Bipolar Transistors

Gespeichert in:

Autor*in:	Castañer, L.M. [verfasserIn] Sureda, S. Bardés, D. Alcubilla, R.

Format:	Artikel

Erschienen:	1994

Umfang:	2

Übergeordnetes Werk:	Enthalten in: IEEE transactions on electron devices - New York, NY : IEEE, 1963, 41(1994), 3, Seite 454-455
Übergeordnetes Werk:	volume:41 ; year:1994 ; number:3 ; pages:454-455 ; extent:2

Katalog-ID:	OLC1738298523

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spelling	(DE-627)OLC1738298523 (DE-599)GBVOLC1738298523 DE-627 ger DE-627 rakwb 620 Castañer, L.M. verfasserin aut A Compact Charge Ratio Expression for the Emitter Delay of Polysilicon Emitter Bipolar Transistors 1994 2 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Sureda, S. oth Bardés, D. oth Alcubilla, R. oth Enthalten in IEEE transactions on electron devices New York, NY : IEEE, 1963 41(1994), 3, Seite 454-455 (DE-627)129602922 (DE-600)241634-7 (DE-576)015096734 0018-9383 nnns volume:41 year:1994 number:3 pages:454-455 extent:2 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_24 GBV_ILN_32 GBV_ILN_70 GBV_ILN_100 GBV_ILN_120 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2016 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2061 GBV_ILN_4036 GBV_ILN_4046 GBV_ILN_4266 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4309 GBV_ILN_4313 GBV_ILN_4314 GBV_ILN_4315 GBV_ILN_4317 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 AR 41 1994 3 454-455 2
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A Compact Charge Ratio Expression for the Emitter Delay of Polysilicon Emitter Bipolar Transistors

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