Interface Trap Effect on Gate Induced Drain Leakage Current in Submicron N-MOSFET's

Gespeichert in:

Autor*in:	Wang, T. [verfasserIn] Huang, C. Chang, T.E. Chou, J.W. Chang, C.Y.

Format:	Artikel

Erschienen:	1994

Umfang:	2

Übergeordnetes Werk:	Enthalten in: IEEE transactions on electron devices - New York, NY : IEEE, 1963, 41(1994), 12, Seite 2475-2476
Übergeordnetes Werk:	volume:41 ; year:1994 ; number:12 ; pages:2475-2476 ; extent:2

Katalog-ID:	OLC1738301621

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spelling	(DE-627)OLC1738301621 (DE-599)GBVOLC1738301621 DE-627 ger DE-627 rakwb 620 Wang, T. verfasserin aut Interface Trap Effect on Gate Induced Drain Leakage Current in Submicron N-MOSFET's 1994 2 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Huang, C. oth Chang, T.E. oth Chou, J.W. oth Chang, C.Y. oth Enthalten in IEEE transactions on electron devices New York, NY : IEEE, 1963 41(1994), 12, Seite 2475-2476 (DE-627)129602922 (DE-600)241634-7 (DE-576)015096734 0018-9383 nnns volume:41 year:1994 number:12 pages:2475-2476 extent:2 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_24 GBV_ILN_32 GBV_ILN_70 GBV_ILN_100 GBV_ILN_120 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2016 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2061 GBV_ILN_4036 GBV_ILN_4046 GBV_ILN_4266 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4309 GBV_ILN_4313 GBV_ILN_4314 GBV_ILN_4315 GBV_ILN_4317 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 AR 41 1994 12 2475-2476 2
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allfieldsSound	(DE-627)OLC1738301621 (DE-599)GBVOLC1738301621 DE-627 ger DE-627 rakwb 620 Wang, T. verfasserin aut Interface Trap Effect on Gate Induced Drain Leakage Current in Submicron N-MOSFET's 1994 2 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Huang, C. oth Chang, T.E. oth Chou, J.W. oth Chang, C.Y. oth Enthalten in IEEE transactions on electron devices New York, NY : IEEE, 1963 41(1994), 12, Seite 2475-2476 (DE-627)129602922 (DE-600)241634-7 (DE-576)015096734 0018-9383 nnns volume:41 year:1994 number:12 pages:2475-2476 extent:2 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_24 GBV_ILN_32 GBV_ILN_70 GBV_ILN_100 GBV_ILN_120 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2016 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2061 GBV_ILN_4036 GBV_ILN_4046 GBV_ILN_4266 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4309 GBV_ILN_4313 GBV_ILN_4314 GBV_ILN_4315 GBV_ILN_4317 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 AR 41 1994 12 2475-2476 2
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Interface Trap Effect on Gate Induced Drain Leakage Current in Submicron N-MOSFET's

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