An annealing study of defects induced by electron irradiation of Czochralski-grown Si using a positron lifetime technique

Gespeichert in:

Autor*in:	Kawasuso, A. [verfasserIn] Hasegawa, M. Suezawa, M. Yamaguchi, S. Sumino, K.

Format:	Artikel

Erschienen:	1995

Umfang:	7

Übergeordnetes Werk:	Enthalten in: Applied surface science - Amsterdam [u.a.] : Elsevier, 1985, 85(1995), Seite 280-286
Übergeordnetes Werk:	volume:85 ; year:1995 ; pages:280-286 ; extent:7

Katalog-ID:	OLC1744913498

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author	Kawasuso, A.
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title_sort	annealing study of defects induced by electron irradiation of czochralski-grown si using a positron lifetime technique
title_auth	An annealing study of defects induced by electron irradiation of Czochralski-grown Si using a positron lifetime technique
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An annealing study of defects induced by electron irradiation of Czochralski-grown Si using a positron lifetime technique

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