A vertical submicron SiC thin film transistor

Gespeichert in:

Autor*in:	Hwang, J.D. [verfasserIn] Fang, Y.K. Tsai, T.Y.

Format:	Artikel

Erschienen:	1995

Umfang:	4

Übergeordnetes Werk:	Enthalten in: Solid state electronics - Amsterdam [u.a.] : Elsevier, 1960, 38(1995), 2, Seite 275-278
Übergeordnetes Werk:	volume:38 ; year:1995 ; number:2 ; pages:275-278 ; extent:4

Katalog-ID:	OLC174901730X

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allfields	(DE-627)OLC174901730X (DE-599)GBVOLC174901730X DE-627 ger DE-627 rakwb 530 620 33.72 bkl 33.61 bkl 53.56 bkl 53.52 bkl Hwang, J.D. verfasserin aut A vertical submicron SiC thin film transistor 1995 4 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Fang, Y.K. oth Tsai, T.Y. oth Enthalten in Solid state electronics Amsterdam [u.a.] : Elsevier, 1960 38(1995), 2, Seite 275-278 (DE-627)129482005 (DE-600)204574-6 (DE-576)014865149 0038-1101 nnns volume:38 year:1995 number:2 pages:275-278 extent:4 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_62 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2016 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4046 GBV_ILN_4306 GBV_ILN_4309 GBV_ILN_4318 GBV_ILN_4323 GBV_ILN_4700 33.72 AVZ 33.61 AVZ 53.56 AVZ 53.52 AVZ AR 38 1995 2 275-278 4
spelling	(DE-627)OLC174901730X (DE-599)GBVOLC174901730X DE-627 ger DE-627 rakwb 530 620 33.72 bkl 33.61 bkl 53.56 bkl 53.52 bkl Hwang, J.D. verfasserin aut A vertical submicron SiC thin film transistor 1995 4 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Fang, Y.K. oth Tsai, T.Y. oth Enthalten in Solid state electronics Amsterdam [u.a.] : Elsevier, 1960 38(1995), 2, Seite 275-278 (DE-627)129482005 (DE-600)204574-6 (DE-576)014865149 0038-1101 nnns volume:38 year:1995 number:2 pages:275-278 extent:4 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_62 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2016 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4046 GBV_ILN_4306 GBV_ILN_4309 GBV_ILN_4318 GBV_ILN_4323 GBV_ILN_4700 33.72 AVZ 33.61 AVZ 53.56 AVZ 53.52 AVZ AR 38 1995 2 275-278 4
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allfieldsGer	(DE-627)OLC174901730X (DE-599)GBVOLC174901730X DE-627 ger DE-627 rakwb 530 620 33.72 bkl 33.61 bkl 53.56 bkl 53.52 bkl Hwang, J.D. verfasserin aut A vertical submicron SiC thin film transistor 1995 4 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Fang, Y.K. oth Tsai, T.Y. oth Enthalten in Solid state electronics Amsterdam [u.a.] : Elsevier, 1960 38(1995), 2, Seite 275-278 (DE-627)129482005 (DE-600)204574-6 (DE-576)014865149 0038-1101 nnns volume:38 year:1995 number:2 pages:275-278 extent:4 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_62 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2016 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4046 GBV_ILN_4306 GBV_ILN_4309 GBV_ILN_4318 GBV_ILN_4323 GBV_ILN_4700 33.72 AVZ 33.61 AVZ 53.56 AVZ 53.52 AVZ AR 38 1995 2 275-278 4
allfieldsSound	(DE-627)OLC174901730X (DE-599)GBVOLC174901730X DE-627 ger DE-627 rakwb 530 620 33.72 bkl 33.61 bkl 53.56 bkl 53.52 bkl Hwang, J.D. verfasserin aut A vertical submicron SiC thin film transistor 1995 4 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Fang, Y.K. oth Tsai, T.Y. oth Enthalten in Solid state electronics Amsterdam [u.a.] : Elsevier, 1960 38(1995), 2, Seite 275-278 (DE-627)129482005 (DE-600)204574-6 (DE-576)014865149 0038-1101 nnns volume:38 year:1995 number:2 pages:275-278 extent:4 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_62 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2016 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4046 GBV_ILN_4306 GBV_ILN_4309 GBV_ILN_4318 GBV_ILN_4323 GBV_ILN_4700 33.72 AVZ 33.61 AVZ 53.56 AVZ 53.52 AVZ AR 38 1995 2 275-278 4
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A vertical submicron SiC thin film transistor

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