Analysis of non-exponential thermally stimulated currents for heavily doped silicon diodes

Gespeichert in:

Autor*in:	Borchi, Emilio [verfasserIn] Bruzzi, Mara

Format:	Artikel

Erschienen:	1995

Umfang:	8

Übergeordnetes Werk:	Enthalten in: Solid state electronics - Amsterdam [u.a.] : Elsevier, 1960, 38(1995), 4, Seite 753-760
Übergeordnetes Werk:	volume:38 ; year:1995 ; number:4 ; pages:753-760 ; extent:8

Katalog-ID:	OLC1749018039

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Analysis of non-exponential thermally stimulated currents for heavily doped silicon diodes

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