Nanosilicon dot arrays with a bit pitch and a track pitch of 25 nm formed by electron-beam drawing and reactive ion etching for 1 Tbit-in.2 storage

Gespeichert in:

Autor*in:	Hosaka, Sumio [verfasserIn] Sano, Hirotaka Shirai, Masumi Sone, Hayato

Format:	Artikel

Erschienen:	2006

Umfang:	1

Übergeordnetes Werk:	Enthalten in: Applied physics letters - Melville, NY : AIP, 1962, 89(2006), 22, Seite 223131
Übergeordnetes Werk:	volume:89 ; year:2006 ; number:22 ; pages:223131 ; extent:1

Katalog-ID:	OLC1754891241

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allfieldsSound	sw061214 (DE-627)OLC1754891241 (DE-599)GBVOLC1754891241 DE-627 ger DE-627 rakwb 530 Hosaka, Sumio verfasserin aut Nanosilicon dot arrays with a bit pitch and a track pitch of 25 nm formed by electron-beam drawing and reactive ion etching for 1 Tbit-in.2 storage 2006 1 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Sano, Hirotaka oth Shirai, Masumi oth Sone, Hayato oth Enthalten in Applied physics letters Melville, NY : AIP, 1962 89(2006), 22, Seite 223131 (DE-627)12951568X (DE-600)211245-0 (DE-576)014926210 0003-6951 nnns volume:89 year:2006 number:22 pages:223131 extent:1 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_55 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2020 GBV_ILN_2192 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 89 2006 22 223131 1
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Nanosilicon dot arrays with a bit pitch and a track pitch of 25 nm formed by electron-beam drawing and reactive ion etching for 1 Tbit-in.2 storage

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