Abnormal I-V characteristics and metal-insulator transition of Fe-doped amorphous carbon-silicon p-n junction

Gespeichert in:

Autor*in:	Hao, Lanzhong [verfasserIn] Xue, Qingzhong Gao, Xili Li, Qun Zheng, Qingbin Yan, Keyou

Format:	Artikel

Erschienen:	2007

Umfang:	1

Übergeordnetes Werk:	Enthalten in: Journal of applied physics - Melville, NY : AIP, 1937, 101(2007), 5, Seite 53718
Übergeordnetes Werk:	volume:101 ; year:2007 ; number:5 ; pages:53718 ; extent:1

Katalog-ID:	OLC1765641233

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Abnormal I-V characteristics and metal-insulator transition of Fe-doped amorphous carbon-silicon p-n junction

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