Some mechanisms for the incorporation of hydrogen in Hf-based gate dielectric films on Si

Gespeichert in:

Autor*in:	Driemeier, C. [verfasserIn] Baumvol, I.J.R.

Format:	Artikel

Erschienen:	2007

Umfang:	6

Übergeordnetes Werk:	Enthalten in: Physica status solidi. A, Applications and materials science - Berlin : Wiley-VCH, 1970, 204(2007), 4, Seite 945-950
Übergeordnetes Werk:	volume:204 ; year:2007 ; number:4 ; pages:945-950 ; extent:6

Katalog-ID:	OLC1766578594

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Some mechanisms for the incorporation of hydrogen in Hf-based gate dielectric films on Si

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