Analysis of the degradation of HfO2-SiO2 gate stacks using nanoscale and device level techniques

Gespeichert in:

Autor*in:	Aguilera, L. [verfasserIn] Amat, E. Rodríguez, R. Porti, M. Nafría, M. Aymerich, X.

Format:	Artikel

Erschienen:	2007

Umfang:	4

Übergeordnetes Werk:	Enthalten in: Microelectronic engineering - Amsterdam [u.a.] : Elsevier, 1983, 84(2007), 5, Seite 1618-1621
Übergeordnetes Werk:	volume:84 ; year:2007 ; number:5 ; pages:1618-1621 ; extent:4

Katalog-ID:	OLC1768703191

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Analysis of the degradation of HfO2-SiO2 gate stacks using nanoscale and device level techniques

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