The effect of rapid thermal N2O nitridation on the oxide-Si(100) interface structure

Gespeichert in:

Autor*in:	Lu, Z.H. [verfasserIn] Tay, S.P. Cao, R. Pianetta, P.

Format:	Artikel

Erschienen:	1995

Umfang:	3

Übergeordnetes Werk:	Enthalten in: Applied physics letters - Melville, NY : AIP, 1962, 67(1995), 19, Seite 2836-2838
Übergeordnetes Werk:	volume:67 ; year:1995 ; number:19 ; pages:2836-2838 ; extent:3

Katalog-ID:	OLC1770183833

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The effect of rapid thermal N2O nitridation on the oxide-Si(100) interface structure

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