Abnormal current–voltage characteristics and metal–insulator transition of amorphous carbon film-silicon heterojunction

Gespeichert in:

Autor*in:	Gao, Xili [verfasserIn] Xue, Qingzhong Hao, Lanzhong Li, Qun Zheng, Qingbin Yan, Keyou

Format:	Artikel

Erschienen:	2007

Systematik:	UA 1000

Umfang:	4

Übergeordnetes Werk:	Enthalten in: Physics letters / A - Amsterdam [u.a.] : Elsevier, 1967, 371(2007), 4, Seite 318-321
Übergeordnetes Werk:	volume:371 ; year:2007 ; number:4 ; pages:318-321 ; extent:4

Katalog-ID:	OLC1782108483

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allfieldsSound	sw071114 (DE-627)OLC1782108483 (DE-599)GBVOLC1782108483 DE-627 ger DE-627 rakwb 530 UA 1000 AVZ rvk Gao, Xili verfasserin aut Abnormal current–voltage characteristics and metal–insulator transition of amorphous carbon film-silicon heterojunction 2007 4 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Xue, Qingzhong oth Hao, Lanzhong oth Li, Qun oth Zheng, Qingbin oth Yan, Keyou oth Enthalten in Physics letters / A Amsterdam [u.a.] : Elsevier, 1967 371(2007), 4, Seite 318-321 (DE-627)129504068 (DE-600)208865-4 (DE-576)014907372 0031-9163 nnns volume:371 year:2007 number:4 pages:318-321 extent:4 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_40 GBV_ILN_59 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_120 GBV_ILN_285 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_2279 GBV_ILN_4036 GBV_ILN_4126 GBV_ILN_4307 GBV_ILN_4310 GBV_ILN_4314 UA 1000 AR 371 2007 4 318-321 4
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Abnormal current–voltage characteristics and metal–insulator transition of amorphous carbon film-silicon heterojunction

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