Distribution of electrically active nickel atoms in silicon crystals measured by means of deep level transient spectroscopy

Gespeichert in:

Autor*in:	Tanaka, Shuji [verfasserIn] Kitagawa, Hajime

Format:	Artikel

Erschienen:	2007

Umfang:	4

Übergeordnetes Werk:	Enthalten in: Physica. B, Condensed matter - Amsterdam : Elsevier, 1988, 401(2007), Seite 115-118
Übergeordnetes Werk:	volume:401 ; year:2007 ; pages:115-118 ; extent:4

Katalog-ID:	OLC1782745939

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spelling	sw071123 (DE-627)OLC1782745939 (DE-599)GBVOLC1782745939 DE-627 ger DE-627 rakwb 530 33.60 bkl 51.00 bkl Tanaka, Shuji verfasserin aut Distribution of electrically active nickel atoms in silicon crystals measured by means of deep level transient spectroscopy 2007 4 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Kitagawa, Hajime oth Enthalten in Physica. B, Condensed matter Amsterdam : Elsevier, 1988 401(2007), Seite 115-118 (DE-627)129942839 (DE-600)392531-6 (DE-576)017349354 0921-4526 nnns volume:401 year:2007 pages:115-118 extent:4 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_24 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2185 GBV_ILN_4126 GBV_ILN_4307 GBV_ILN_4323 33.60 AVZ 51.00 AVZ AR 401 2007 115-118 4
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