Forward tunneling effect and metal-insulator transition in the BaTiO3 film-Si n-n heterojunction

Gespeichert in:

Autor*in:	Hao, Lanzhong [verfasserIn] Xue, Qingzhong Gao, Xili Li, Qun Zheng, Qingbin Yan, Keyou

Format:	Artikel

Erschienen:	2007

Umfang:	1

Übergeordnetes Werk:	Enthalten in: Applied physics letters - Melville, NY : AIP, 1962, 91(2007), 21, Seite 212105
Übergeordnetes Werk:	volume:91 ; year:2007 ; number:21 ; pages:212105 ; extent:1

Katalog-ID:	OLC1783402547

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Forward tunneling effect and metal-insulator transition in the BaTiO3 film-Si n-n heterojunction

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