Total ionizing dose effects in shallow trench isolation oxides

Gespeichert in:

Autor*in:	Faccio, Federico [verfasserIn] Barnaby, Hugh J. Chen, Xiao J. Fleetwood, Daniel M. Gonella, Laura Mclain, Michael Schrimpf, Ronald D.

Format:	Artikel

Erschienen:	2008

Umfang:	8

Übergeordnetes Werk:	Enthalten in: Microelectronics reliability - Amsterdam [u.a.] : Elsevier, 1964, 48(2008), 7, Seite 1000-1007
Übergeordnetes Werk:	volume:48 ; year:2008 ; number:7 ; pages:1000-1007 ; extent:8

Katalog-ID:	OLC1798263416

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allfields	sw080805 (DE-627)OLC1798263416 (DE-599)GBVOLC1798263416 DE-627 ger DE-627 rakwb 620 53.55 bkl 53.52 bkl 50.16 bkl Faccio, Federico verfasserin aut Total ionizing dose effects in shallow trench isolation oxides 2008 8 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Barnaby, Hugh J. oth Chen, Xiao J. oth Fleetwood, Daniel M. oth Gonella, Laura oth Mclain, Michael oth Schrimpf, Ronald D. oth Enthalten in Microelectronics reliability Amsterdam [u.a.] : Elsevier, 1964 48(2008), 7, Seite 1000-1007 (DE-627)129596949 (DE-600)240853-3 (DE-576)015090116 0026-2714 nnns volume:48 year:2008 number:7 pages:1000-1007 extent:8 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 GBV_ILN_2006 GBV_ILN_4046 53.55 AVZ 53.52 AVZ 50.16 AVZ AR 48 2008 7 1000-1007 8
spelling	sw080805 (DE-627)OLC1798263416 (DE-599)GBVOLC1798263416 DE-627 ger DE-627 rakwb 620 53.55 bkl 53.52 bkl 50.16 bkl Faccio, Federico verfasserin aut Total ionizing dose effects in shallow trench isolation oxides 2008 8 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Barnaby, Hugh J. oth Chen, Xiao J. oth Fleetwood, Daniel M. oth Gonella, Laura oth Mclain, Michael oth Schrimpf, Ronald D. oth Enthalten in Microelectronics reliability Amsterdam [u.a.] : Elsevier, 1964 48(2008), 7, Seite 1000-1007 (DE-627)129596949 (DE-600)240853-3 (DE-576)015090116 0026-2714 nnns volume:48 year:2008 number:7 pages:1000-1007 extent:8 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 GBV_ILN_2006 GBV_ILN_4046 53.55 AVZ 53.52 AVZ 50.16 AVZ AR 48 2008 7 1000-1007 8
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allfieldsGer	sw080805 (DE-627)OLC1798263416 (DE-599)GBVOLC1798263416 DE-627 ger DE-627 rakwb 620 53.55 bkl 53.52 bkl 50.16 bkl Faccio, Federico verfasserin aut Total ionizing dose effects in shallow trench isolation oxides 2008 8 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Barnaby, Hugh J. oth Chen, Xiao J. oth Fleetwood, Daniel M. oth Gonella, Laura oth Mclain, Michael oth Schrimpf, Ronald D. oth Enthalten in Microelectronics reliability Amsterdam [u.a.] : Elsevier, 1964 48(2008), 7, Seite 1000-1007 (DE-627)129596949 (DE-600)240853-3 (DE-576)015090116 0026-2714 nnns volume:48 year:2008 number:7 pages:1000-1007 extent:8 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 GBV_ILN_2006 GBV_ILN_4046 53.55 AVZ 53.52 AVZ 50.16 AVZ AR 48 2008 7 1000-1007 8
allfieldsSound	sw080805 (DE-627)OLC1798263416 (DE-599)GBVOLC1798263416 DE-627 ger DE-627 rakwb 620 53.55 bkl 53.52 bkl 50.16 bkl Faccio, Federico verfasserin aut Total ionizing dose effects in shallow trench isolation oxides 2008 8 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Barnaby, Hugh J. oth Chen, Xiao J. oth Fleetwood, Daniel M. oth Gonella, Laura oth Mclain, Michael oth Schrimpf, Ronald D. oth Enthalten in Microelectronics reliability Amsterdam [u.a.] : Elsevier, 1964 48(2008), 7, Seite 1000-1007 (DE-627)129596949 (DE-600)240853-3 (DE-576)015090116 0026-2714 nnns volume:48 year:2008 number:7 pages:1000-1007 extent:8 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 GBV_ILN_2006 GBV_ILN_4046 53.55 AVZ 53.52 AVZ 50.16 AVZ AR 48 2008 7 1000-1007 8
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