Investigating Degradation Mechanisms in 130 nm and 90 nm Commercial CMOS Technologies Under Extreme Radiation Conditions

Gespeichert in:

Autor*in:	Ratti, L. [verfasserIn] Gaioni, L. Manghisoni, M. Traversi, G. Pantano, D.

Format:	Artikel

Erschienen:	2008

Umfang:	9

Übergeordnetes Werk:	Enthalten in: IEEE transactions on nuclear science - New York, NY : IEEE, 1963, 55(2008), 4, 1, Seite 1992-2000
Übergeordnetes Werk:	volume:55 ; year:2008 ; number:4 ; supplement:1 ; pages:1992-2000 ; extent:9

Katalog-ID:	OLC1802434666

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