Defect formation and annealing behaviors of fluorine-implanted GaN layers revealed by positron annihilation spectroscopy

Gespeichert in:

Autor*in:	Wang, M.J. [verfasserIn] Yuan, L. Cheng, C.C. Beling, C.D. Chen, K.J.

Format:	Artikel

Erschienen:	2009

Umfang:	1

Übergeordnetes Werk:	Enthalten in: Applied physics letters - Melville, NY : AIP, 1962, 94(2009), 6, Seite 61910
Übergeordnetes Werk:	volume:94 ; year:2009 ; number:6 ; pages:61910 ; extent:1

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Defect formation and annealing behaviors of fluorine-implanted GaN layers revealed by positron annihilation spectroscopy

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