Growth mode control and micro-Raman characterization of triangular GaN nanowires in a vapor phase epitaxy process

Gespeichert in:

Autor*in:	Kang, S.M. [verfasserIn] Shin, T.I. Kim, S.-W. Yoon, D.H.

Format:	Artikel

Erschienen:	2009

Umfang:	3

Übergeordnetes Werk:	Enthalten in: Materials letters - New York, NY [u.a.] : Elsevier, 1982, 63(2009), 15, Seite 1296-1298
Übergeordnetes Werk:	volume:63 ; year:2009 ; number:15 ; pages:1296-1298 ; extent:3

Katalog-ID:	OLC1813657254

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