3D active edge silicon sensors with different electrode configurations: Radiation hardness and noise performance

Gespeichert in:

Autor*in:	Da Viá, C. [verfasserIn] Bolle, E. Einsweiler, K. Garcia-Sciveres, M. Hasi, J. Kenney, C. Linhart, V. Parker, Sherwood Pospisil, S. Rohne, O. Slavicek, T. Watts, S. Wermes, N.

Format:	Artikel

Erschienen:	2009

Systematik:	UA 5680.

Umfang:	7

Übergeordnetes Werk:	Enthalten in: Nuclear instruments & methods in physics research / A - Amsterdam : North-Holland Publ. Co., 1984, 604(2009), 3, Seite 505-511
Übergeordnetes Werk:	volume:604 ; year:2009 ; number:3 ; pages:505-511 ; extent:7

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3D active edge silicon sensors with different electrode configurations: Radiation hardness and noise performance

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