053702 Electrical and structural properties of AlN-GaN and AlGaN-GaN heterojunctions
Gespeichert in:
Autor*in: |
Polyakov, A.Y. [verfasserIn] |
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Format: |
Artikel |
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Erschienen: |
2008 |
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Übergeordnetes Werk: |
Enthalten in: Journal of applied physics - Melville, NY : AIP, 1937, 104(2008), 5 |
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Übergeordnetes Werk: |
volume:104 ; year:2008 ; number:5 |
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sw090811 (DE-627)OLC1823338224 (DE-599)GBVOLC1823338224 DE-627 ger DE-627 rakwb 530 Polyakov, A.Y. verfasserin aut 053702 Electrical and structural properties of AlN-GaN and AlGaN-GaN heterojunctions 2008 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Smirnov, N.B. oth Govorkov, A.V. oth Markov, A.V. oth Yugova, T.G. oth Dabiran, A.M. oth Wowchak, A.M. oth Cui, B. oth Osinsky, A.V. oth Chow, P.P. oth Pearton, S.J. oth Scherbatchev, K.D. oth Bublik, V.T. oth Enthalten in Journal of applied physics Melville, NY : AIP, 1937 104(2008), 5 (DE-627)129079030 (DE-600)3112-4 (DE-576)014411652 0021-8979 nnns volume:104 year:2008 number:5 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_40 GBV_ILN_59 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2027 GBV_ILN_2185 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4307 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 104 2008 5 |
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sw090811 (DE-627)OLC1823338224 (DE-599)GBVOLC1823338224 DE-627 ger DE-627 rakwb 530 Polyakov, A.Y. verfasserin aut 053702 Electrical and structural properties of AlN-GaN and AlGaN-GaN heterojunctions 2008 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Smirnov, N.B. oth Govorkov, A.V. oth Markov, A.V. oth Yugova, T.G. oth Dabiran, A.M. oth Wowchak, A.M. oth Cui, B. oth Osinsky, A.V. oth Chow, P.P. oth Pearton, S.J. oth Scherbatchev, K.D. oth Bublik, V.T. oth Enthalten in Journal of applied physics Melville, NY : AIP, 1937 104(2008), 5 (DE-627)129079030 (DE-600)3112-4 (DE-576)014411652 0021-8979 nnns volume:104 year:2008 number:5 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_40 GBV_ILN_59 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2027 GBV_ILN_2185 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4307 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 104 2008 5 |
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sw090811 (DE-627)OLC1823338224 (DE-599)GBVOLC1823338224 DE-627 ger DE-627 rakwb 530 Polyakov, A.Y. verfasserin aut 053702 Electrical and structural properties of AlN-GaN and AlGaN-GaN heterojunctions 2008 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Smirnov, N.B. oth Govorkov, A.V. oth Markov, A.V. oth Yugova, T.G. oth Dabiran, A.M. oth Wowchak, A.M. oth Cui, B. oth Osinsky, A.V. oth Chow, P.P. oth Pearton, S.J. oth Scherbatchev, K.D. oth Bublik, V.T. oth Enthalten in Journal of applied physics Melville, NY : AIP, 1937 104(2008), 5 (DE-627)129079030 (DE-600)3112-4 (DE-576)014411652 0021-8979 nnns volume:104 year:2008 number:5 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_40 GBV_ILN_59 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2027 GBV_ILN_2185 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4307 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 104 2008 5 |
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