A High-Voltage LDMOS Compatible With High-Voltage Integrated Circuits on p-Type SOI Layer

Gespeichert in:

Autor*in:	Luo, X. [verfasserIn] Lei, T. Wang, Y. Gao, H. Fang, J. Qiao, M. Zhang, W. Deng, H. Zhang, B. Li, Z. Xiao, Z. Chen, Z. Xu, J.

Format:	Artikel

Erschienen:	2009

Umfang:	3

Übergeordnetes Werk:	Enthalten in: IEEE electron device letters - New York, NY : IEEE, 1980, 30(2009), 10, Seite 1093-1095
Übergeordnetes Werk:	volume:30 ; year:2009 ; number:10 ; pages:1093-1095 ; extent:3

Katalog-ID:	OLC182762325X

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spelling	sw091008 (DE-627)OLC182762325X (DE-599)GBVOLC182762325X DE-627 ger DE-627 rakwb 620 Luo, X. verfasserin aut A High-Voltage LDMOS Compatible With High-Voltage Integrated Circuits on p-Type SOI Layer 2009 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Lei, T. oth Wang, Y. oth Gao, H. oth Fang, J. oth Qiao, M. oth Zhang, W. oth Deng, H. oth Zhang, B. oth Li, Z. oth Xiao, Z. oth Chen, Z. oth Xu, J. oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 30(2009), 10, Seite 1093-1095 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:30 year:2009 number:10 pages:1093-1095 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_22 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2061 GBV_ILN_4266 GBV_ILN_4313 GBV_ILN_4314 AR 30 2009 10 1093-1095 3
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