Large-signal analysis of substrate effects in RF-power SOI-LDMOS transistors
Autor*in: |
Urban, C. [verfasserIn] |
---|
Format: |
Artikel |
---|
Erschienen: |
2010 |
---|
Umfang: |
7 |
---|
Übergeordnetes Werk: |
Enthalten in: Solid state electronics - Amsterdam [u.a.] : Elsevier, 1960, 54(2010), 2 vom: Feb., Seite 171-178 |
---|---|
Übergeordnetes Werk: |
volume:54 ; year:2010 ; number:2 ; month:02 ; pages:171-178 ; extent:7 |
Katalog-ID: |
OLC1835751334 |
---|
LEADER | 01000caa a22002652 4500 | ||
---|---|---|---|
001 | OLC1835751334 | ||
003 | DE-627 | ||
005 | 20220220152313.0 | ||
007 | tu | ||
008 | 100216s2010 xx ||||| 00| ||und c | ||
028 | 5 | 2 | |a sw100215_1 |
035 | |a (DE-627)OLC1835751334 | ||
035 | |a (DE-599)GBVOLC1835751334 | ||
040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
082 | 0 | 4 | |a 530 |a 620 |
084 | |a 33.72 |2 bkl | ||
084 | |a 33.61 |2 bkl | ||
084 | |a 53.56 |2 bkl | ||
084 | |a 53.52 |2 bkl | ||
100 | 1 | |a Urban, C. |e verfasserin |4 aut | |
245 | 1 | 0 | |a Large-signal analysis of substrate effects in RF-power SOI-LDMOS transistors |
264 | 1 | |c 2010 | |
300 | |a 7 | ||
336 | |a Text |b txt |2 rdacontent | ||
337 | |a ohne Hilfsmittel zu benutzen |b n |2 rdamedia | ||
338 | |a Band |b nc |2 rdacarrier | ||
700 | 1 | |a Sandow, C. |4 oth | |
700 | 1 | |a Zhao, Q.-T. |4 oth | |
700 | 1 | |a Knoch, J. |4 oth | |
700 | 1 | |a Lenk, S. |4 oth | |
700 | 1 | |a Mantl, S. |4 oth | |
773 | 0 | 8 | |i Enthalten in |t Solid state electronics |d Amsterdam [u.a.] : Elsevier, 1960 |g 54(2010), 2 vom: Feb., Seite 171-178 |w (DE-627)129482005 |w (DE-600)204574-6 |w (DE-576)014865149 |x 0038-1101 |7 nnns |
773 | 1 | 8 | |g volume:54 |g year:2010 |g number:2 |g month:02 |g pages:171-178 |g extent:7 |
912 | |a GBV_USEFLAG_A | ||
912 | |a SYSFLAG_A | ||
912 | |a GBV_OLC | ||
912 | |a SSG-OLC-TEC | ||
912 | |a SSG-OLC-PHY | ||
912 | |a GBV_ILN_21 | ||
912 | |a GBV_ILN_23 | ||
912 | |a GBV_ILN_70 | ||
912 | |a GBV_ILN_2004 | ||
912 | |a GBV_ILN_2006 | ||
912 | |a GBV_ILN_2020 | ||
912 | |a GBV_ILN_2021 | ||
912 | |a GBV_ILN_4046 | ||
912 | |a GBV_ILN_4309 | ||
912 | |a GBV_ILN_4318 | ||
912 | |a GBV_ILN_4700 | ||
936 | b | k | |a 33.72 |q AVZ |
936 | b | k | |a 33.61 |q AVZ |
936 | b | k | |a 53.56 |q AVZ |
936 | b | k | |a 53.52 |q AVZ |
951 | |a AR | ||
952 | |d 54 |j 2010 |e 2 |c 2 |h 171-178 |g 7 |
author_variant |
c u cu |
---|---|
matchkey_str |
article:00381101:2010----::agsgaaayiosbtaefetirpwro |
hierarchy_sort_str |
2010 |
bklnumber |
33.72 33.61 53.56 53.52 |
publishDate |
2010 |
allfields |
sw100215_1 (DE-627)OLC1835751334 (DE-599)GBVOLC1835751334 DE-627 ger DE-627 rakwb 530 620 33.72 bkl 33.61 bkl 53.56 bkl 53.52 bkl Urban, C. verfasserin aut Large-signal analysis of substrate effects in RF-power SOI-LDMOS transistors 2010 7 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Sandow, C. oth Zhao, Q.-T. oth Knoch, J. oth Lenk, S. oth Mantl, S. oth Enthalten in Solid state electronics Amsterdam [u.a.] : Elsevier, 1960 54(2010), 2 vom: Feb., Seite 171-178 (DE-627)129482005 (DE-600)204574-6 (DE-576)014865149 0038-1101 nnns volume:54 year:2010 number:2 month:02 pages:171-178 extent:7 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_23 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4046 GBV_ILN_4309 GBV_ILN_4318 GBV_ILN_4700 33.72 AVZ 33.61 AVZ 53.56 AVZ 53.52 AVZ AR 54 2010 2 2 171-178 7 |
spelling |
sw100215_1 (DE-627)OLC1835751334 (DE-599)GBVOLC1835751334 DE-627 ger DE-627 rakwb 530 620 33.72 bkl 33.61 bkl 53.56 bkl 53.52 bkl Urban, C. verfasserin aut Large-signal analysis of substrate effects in RF-power SOI-LDMOS transistors 2010 7 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Sandow, C. oth Zhao, Q.-T. oth Knoch, J. oth Lenk, S. oth Mantl, S. oth Enthalten in Solid state electronics Amsterdam [u.a.] : Elsevier, 1960 54(2010), 2 vom: Feb., Seite 171-178 (DE-627)129482005 (DE-600)204574-6 (DE-576)014865149 0038-1101 nnns volume:54 year:2010 number:2 month:02 pages:171-178 extent:7 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_23 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4046 GBV_ILN_4309 GBV_ILN_4318 GBV_ILN_4700 33.72 AVZ 33.61 AVZ 53.56 AVZ 53.52 AVZ AR 54 2010 2 2 171-178 7 |
allfields_unstemmed |
sw100215_1 (DE-627)OLC1835751334 (DE-599)GBVOLC1835751334 DE-627 ger DE-627 rakwb 530 620 33.72 bkl 33.61 bkl 53.56 bkl 53.52 bkl Urban, C. verfasserin aut Large-signal analysis of substrate effects in RF-power SOI-LDMOS transistors 2010 7 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Sandow, C. oth Zhao, Q.-T. oth Knoch, J. oth Lenk, S. oth Mantl, S. oth Enthalten in Solid state electronics Amsterdam [u.a.] : Elsevier, 1960 54(2010), 2 vom: Feb., Seite 171-178 (DE-627)129482005 (DE-600)204574-6 (DE-576)014865149 0038-1101 nnns volume:54 year:2010 number:2 month:02 pages:171-178 extent:7 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_23 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4046 GBV_ILN_4309 GBV_ILN_4318 GBV_ILN_4700 33.72 AVZ 33.61 AVZ 53.56 AVZ 53.52 AVZ AR 54 2010 2 2 171-178 7 |
allfieldsGer |
sw100215_1 (DE-627)OLC1835751334 (DE-599)GBVOLC1835751334 DE-627 ger DE-627 rakwb 530 620 33.72 bkl 33.61 bkl 53.56 bkl 53.52 bkl Urban, C. verfasserin aut Large-signal analysis of substrate effects in RF-power SOI-LDMOS transistors 2010 7 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Sandow, C. oth Zhao, Q.-T. oth Knoch, J. oth Lenk, S. oth Mantl, S. oth Enthalten in Solid state electronics Amsterdam [u.a.] : Elsevier, 1960 54(2010), 2 vom: Feb., Seite 171-178 (DE-627)129482005 (DE-600)204574-6 (DE-576)014865149 0038-1101 nnns volume:54 year:2010 number:2 month:02 pages:171-178 extent:7 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_23 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4046 GBV_ILN_4309 GBV_ILN_4318 GBV_ILN_4700 33.72 AVZ 33.61 AVZ 53.56 AVZ 53.52 AVZ AR 54 2010 2 2 171-178 7 |
allfieldsSound |
sw100215_1 (DE-627)OLC1835751334 (DE-599)GBVOLC1835751334 DE-627 ger DE-627 rakwb 530 620 33.72 bkl 33.61 bkl 53.56 bkl 53.52 bkl Urban, C. verfasserin aut Large-signal analysis of substrate effects in RF-power SOI-LDMOS transistors 2010 7 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Sandow, C. oth Zhao, Q.-T. oth Knoch, J. oth Lenk, S. oth Mantl, S. oth Enthalten in Solid state electronics Amsterdam [u.a.] : Elsevier, 1960 54(2010), 2 vom: Feb., Seite 171-178 (DE-627)129482005 (DE-600)204574-6 (DE-576)014865149 0038-1101 nnns volume:54 year:2010 number:2 month:02 pages:171-178 extent:7 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_23 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4046 GBV_ILN_4309 GBV_ILN_4318 GBV_ILN_4700 33.72 AVZ 33.61 AVZ 53.56 AVZ 53.52 AVZ AR 54 2010 2 2 171-178 7 |
source |
Enthalten in Solid state electronics 54(2010), 2 vom: Feb., Seite 171-178 volume:54 year:2010 number:2 month:02 pages:171-178 extent:7 |
sourceStr |
Enthalten in Solid state electronics 54(2010), 2 vom: Feb., Seite 171-178 volume:54 year:2010 number:2 month:02 pages:171-178 extent:7 |
format_phy_str_mv |
Article |
institution |
findex.gbv.de |
dewey-raw |
530 |
isfreeaccess_bool |
false |
container_title |
Solid state electronics |
authorswithroles_txt_mv |
Urban, C. @@aut@@ Sandow, C. @@oth@@ Zhao, Q.-T. @@oth@@ Knoch, J. @@oth@@ Lenk, S. @@oth@@ Mantl, S. @@oth@@ |
publishDateDaySort_date |
2010-02-01T00:00:00Z |
hierarchy_top_id |
129482005 |
dewey-sort |
3530 |
id |
OLC1835751334 |
fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC1835751334</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220220152313.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">100216s2010 xx ||||| 00| ||und c</controlfield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">sw100215_1</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1835751334</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1835751334</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="a">620</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.72</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.61</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.56</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.52</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Urban, C.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Large-signal analysis of substrate effects in RF-power SOI-LDMOS transistors</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2010</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">7</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sandow, C.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zhao, Q.-T.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Knoch, J.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Lenk, S.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Mantl, S.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Solid state electronics</subfield><subfield code="d">Amsterdam [u.a.] : Elsevier, 1960</subfield><subfield code="g">54(2010), 2 vom: Feb., Seite 171-178</subfield><subfield code="w">(DE-627)129482005</subfield><subfield code="w">(DE-600)204574-6</subfield><subfield code="w">(DE-576)014865149</subfield><subfield code="x">0038-1101</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:54</subfield><subfield code="g">year:2010</subfield><subfield code="g">number:2</subfield><subfield code="g">month:02</subfield><subfield code="g">pages:171-178</subfield><subfield code="g">extent:7</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_21</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4046</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4309</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4318</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">33.72</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">33.61</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">53.56</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">53.52</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">54</subfield><subfield code="j">2010</subfield><subfield code="e">2</subfield><subfield code="c">2</subfield><subfield code="h">171-178</subfield><subfield code="g">7</subfield></datafield></record></collection>
|
author |
Urban, C. |
spellingShingle |
Urban, C. ddc 530 bkl 33.72 bkl 33.61 bkl 53.56 bkl 53.52 Large-signal analysis of substrate effects in RF-power SOI-LDMOS transistors |
authorStr |
Urban, C. |
ppnlink_with_tag_str_mv |
@@773@@(DE-627)129482005 |
format |
Article |
dewey-ones |
530 - Physics 620 - Engineering & allied operations |
delete_txt_mv |
keep |
author_role |
aut |
collection |
OLC |
remote_str |
false |
illustrated |
Not Illustrated |
issn |
0038-1101 |
topic_title |
530 620 33.72 bkl 33.61 bkl 53.56 bkl 53.52 bkl Large-signal analysis of substrate effects in RF-power SOI-LDMOS transistors |
topic |
ddc 530 bkl 33.72 bkl 33.61 bkl 53.56 bkl 53.52 |
topic_unstemmed |
ddc 530 bkl 33.72 bkl 33.61 bkl 53.56 bkl 53.52 |
topic_browse |
ddc 530 bkl 33.72 bkl 33.61 bkl 53.56 bkl 53.52 |
format_facet |
Aufsätze Gedruckte Aufsätze |
format_main_str_mv |
Text Zeitschrift/Artikel |
carriertype_str_mv |
nc |
author2_variant |
c s cs q t z qtz j k jk s l sl s m sm |
hierarchy_parent_title |
Solid state electronics |
hierarchy_parent_id |
129482005 |
dewey-tens |
530 - Physics 620 - Engineering |
hierarchy_top_title |
Solid state electronics |
isfreeaccess_txt |
false |
familylinks_str_mv |
(DE-627)129482005 (DE-600)204574-6 (DE-576)014865149 |
title |
Large-signal analysis of substrate effects in RF-power SOI-LDMOS transistors |
ctrlnum |
(DE-627)OLC1835751334 (DE-599)GBVOLC1835751334 |
title_full |
Large-signal analysis of substrate effects in RF-power SOI-LDMOS transistors |
author_sort |
Urban, C. |
journal |
Solid state electronics |
journalStr |
Solid state electronics |
isOA_bool |
false |
dewey-hundreds |
500 - Science 600 - Technology |
recordtype |
marc |
publishDateSort |
2010 |
contenttype_str_mv |
txt |
container_start_page |
171 |
author_browse |
Urban, C. |
container_volume |
54 |
physical |
7 |
class |
530 620 33.72 bkl 33.61 bkl 53.56 bkl 53.52 bkl |
format_se |
Aufsätze |
author-letter |
Urban, C. |
dewey-full |
530 620 |
title_sort |
large-signal analysis of substrate effects in rf-power soi-ldmos transistors |
title_auth |
Large-signal analysis of substrate effects in RF-power SOI-LDMOS transistors |
collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_23 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4046 GBV_ILN_4309 GBV_ILN_4318 GBV_ILN_4700 |
container_issue |
2 |
title_short |
Large-signal analysis of substrate effects in RF-power SOI-LDMOS transistors |
remote_bool |
false |
author2 |
Sandow, C. Zhao, Q.-T. Knoch, J. Lenk, S. Mantl, S. |
author2Str |
Sandow, C. Zhao, Q.-T. Knoch, J. Lenk, S. Mantl, S. |
ppnlink |
129482005 |
mediatype_str_mv |
n |
isOA_txt |
false |
hochschulschrift_bool |
false |
author2_role |
oth oth oth oth oth |
up_date |
2024-07-03T22:57:39.607Z |
_version_ |
1803600485021646848 |
fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC1835751334</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220220152313.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">100216s2010 xx ||||| 00| ||und c</controlfield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">sw100215_1</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1835751334</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1835751334</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="a">620</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.72</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.61</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.56</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.52</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Urban, C.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Large-signal analysis of substrate effects in RF-power SOI-LDMOS transistors</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2010</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">7</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sandow, C.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zhao, Q.-T.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Knoch, J.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Lenk, S.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Mantl, S.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Solid state electronics</subfield><subfield code="d">Amsterdam [u.a.] : Elsevier, 1960</subfield><subfield code="g">54(2010), 2 vom: Feb., Seite 171-178</subfield><subfield code="w">(DE-627)129482005</subfield><subfield code="w">(DE-600)204574-6</subfield><subfield code="w">(DE-576)014865149</subfield><subfield code="x">0038-1101</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:54</subfield><subfield code="g">year:2010</subfield><subfield code="g">number:2</subfield><subfield code="g">month:02</subfield><subfield code="g">pages:171-178</subfield><subfield code="g">extent:7</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_21</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4046</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4309</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4318</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">33.72</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">33.61</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">53.56</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">53.52</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">54</subfield><subfield code="j">2010</subfield><subfield code="e">2</subfield><subfield code="c">2</subfield><subfield code="h">171-178</subfield><subfield code="g">7</subfield></datafield></record></collection>
|
score |
7.401469 |