A quantitative model for the interpretation of RAV (rocking curve azimuthal variation) results from heteroepitaxial semiconductor layers

Gespeichert in:

Autor*in:	Lai, K.Y. [verfasserIn] Paskova, T. Wheeler, V.D. Grenko, J.A. Johnson, M.A.L. Udwary, K. Preble, E.A. Evans, K.R.

Format:	Artikel

Erschienen:	2010

Umfang:	6

Übergeordnetes Werk:	Enthalten in: Journal of crystal growth - Amsterdam [u.a.] : Elsevier, 1967, 312(2010), 7 vom: 15. März, Seite 886-892
Übergeordnetes Werk:	volume:312 ; year:2010 ; number:7 ; day:15 ; month:03 ; pages:886-892 ; extent:6

Katalog-ID:	OLC1836529856

Internformat


LEADER	01000caa a22002652 4500
001	OLC1836529856
003	DE-627
005	20230515192157.0
007	tu
008	100302s2010 xx \|\|\|\|\| 00\| \|\|und c
028	5	2	\|a sw100301_1
035			\|a (DE-627)OLC1836529856
035			\|a (DE-599)GBVOLC1836529856
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
082	0	4	\|a 540
100	1		\|a Lai, K.Y. \|e verfasserin \|4 aut
245	1	2	\|a A quantitative model for the interpretation of RAV (rocking curve azimuthal variation) results from heteroepitaxial semiconductor layers
264		1	\|c 2010
300			\|a 6
336			\|a Text \|b txt \|2 rdacontent
337			\|a ohne Hilfsmittel zu benutzen \|b n \|2 rdamedia
338			\|a Band \|b nc \|2 rdacarrier
700	1		\|a Paskova, T. \|4 oth
700	1		\|a Wheeler, V.D. \|4 oth
700	1		\|a Grenko, J.A. \|4 oth
700	1		\|a Johnson, M.A.L. \|4 oth
700	1		\|a Udwary, K. \|4 oth
700	1		\|a Preble, E.A. \|4 oth
700	1		\|a Evans, K.R. \|4 oth
773	0	8	\|i Enthalten in \|t Journal of crystal growth \|d Amsterdam [u.a.] : Elsevier, 1967 \|g 312(2010), 7 vom: 15. März, Seite 886-892 \|w (DE-627)129078514 \|w (DE-600)3043-0 \|w (DE-576)014411075 \|x 0022-0248 \|7 nnns
773	1	8	\|g volume:312 \|g year:2010 \|g number:7 \|g day:15 \|g month:03 \|g pages:886-892 \|g extent:6
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_OLC
912			\|a SSG-OLC-PHY
912			\|a SSG-OLC-CHE
912			\|a SSG-OLC-GEO
912			\|a SSG-OLC-PHA
912			\|a SSG-OLC-DE-84
912			\|a SSG-OPC-GGO
912			\|a GBV_ILN_22
912			\|a GBV_ILN_70
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_4012
951			\|a AR
952			\|d 312 \|j 2010 \|e 7 \|b 15 \|c 3 \|h 886-892 \|g 6

Indexfelder

author_variant	k l kl
matchkey_str	article:00220248:2010----::qatttvmdlotenepeainfarciguvaiuhlaitorslsrme
hierarchy_sort_str	2010
publishDate	2010
allfields	sw100301_1 (DE-627)OLC1836529856 (DE-599)GBVOLC1836529856 DE-627 ger DE-627 rakwb 540 Lai, K.Y. verfasserin aut A quantitative model for the interpretation of RAV (rocking curve azimuthal variation) results from heteroepitaxial semiconductor layers 2010 6 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Paskova, T. oth Wheeler, V.D. oth Grenko, J.A. oth Johnson, M.A.L. oth Udwary, K. oth Preble, E.A. oth Evans, K.R. oth Enthalten in Journal of crystal growth Amsterdam [u.a.] : Elsevier, 1967 312(2010), 7 vom: 15. März, Seite 886-892 (DE-627)129078514 (DE-600)3043-0 (DE-576)014411075 0022-0248 nnns volume:312 year:2010 number:7 day:15 month:03 pages:886-892 extent:6 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-GEO SSG-OLC-PHA SSG-OLC-DE-84 SSG-OPC-GGO GBV_ILN_22 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_4012 AR 312 2010 7 15 3 886-892 6
spelling	sw100301_1 (DE-627)OLC1836529856 (DE-599)GBVOLC1836529856 DE-627 ger DE-627 rakwb 540 Lai, K.Y. verfasserin aut A quantitative model for the interpretation of RAV (rocking curve azimuthal variation) results from heteroepitaxial semiconductor layers 2010 6 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Paskova, T. oth Wheeler, V.D. oth Grenko, J.A. oth Johnson, M.A.L. oth Udwary, K. oth Preble, E.A. oth Evans, K.R. oth Enthalten in Journal of crystal growth Amsterdam [u.a.] : Elsevier, 1967 312(2010), 7 vom: 15. März, Seite 886-892 (DE-627)129078514 (DE-600)3043-0 (DE-576)014411075 0022-0248 nnns volume:312 year:2010 number:7 day:15 month:03 pages:886-892 extent:6 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-GEO SSG-OLC-PHA SSG-OLC-DE-84 SSG-OPC-GGO GBV_ILN_22 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_4012 AR 312 2010 7 15 3 886-892 6
allfields_unstemmed	sw100301_1 (DE-627)OLC1836529856 (DE-599)GBVOLC1836529856 DE-627 ger DE-627 rakwb 540 Lai, K.Y. verfasserin aut A quantitative model for the interpretation of RAV (rocking curve azimuthal variation) results from heteroepitaxial semiconductor layers 2010 6 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Paskova, T. oth Wheeler, V.D. oth Grenko, J.A. oth Johnson, M.A.L. oth Udwary, K. oth Preble, E.A. oth Evans, K.R. oth Enthalten in Journal of crystal growth Amsterdam [u.a.] : Elsevier, 1967 312(2010), 7 vom: 15. März, Seite 886-892 (DE-627)129078514 (DE-600)3043-0 (DE-576)014411075 0022-0248 nnns volume:312 year:2010 number:7 day:15 month:03 pages:886-892 extent:6 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-GEO SSG-OLC-PHA SSG-OLC-DE-84 SSG-OPC-GGO GBV_ILN_22 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_4012 AR 312 2010 7 15 3 886-892 6
allfieldsGer	sw100301_1 (DE-627)OLC1836529856 (DE-599)GBVOLC1836529856 DE-627 ger DE-627 rakwb 540 Lai, K.Y. verfasserin aut A quantitative model for the interpretation of RAV (rocking curve azimuthal variation) results from heteroepitaxial semiconductor layers 2010 6 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Paskova, T. oth Wheeler, V.D. oth Grenko, J.A. oth Johnson, M.A.L. oth Udwary, K. oth Preble, E.A. oth Evans, K.R. oth Enthalten in Journal of crystal growth Amsterdam [u.a.] : Elsevier, 1967 312(2010), 7 vom: 15. März, Seite 886-892 (DE-627)129078514 (DE-600)3043-0 (DE-576)014411075 0022-0248 nnns volume:312 year:2010 number:7 day:15 month:03 pages:886-892 extent:6 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-GEO SSG-OLC-PHA SSG-OLC-DE-84 SSG-OPC-GGO GBV_ILN_22 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_4012 AR 312 2010 7 15 3 886-892 6
allfieldsSound	sw100301_1 (DE-627)OLC1836529856 (DE-599)GBVOLC1836529856 DE-627 ger DE-627 rakwb 540 Lai, K.Y. verfasserin aut A quantitative model for the interpretation of RAV (rocking curve azimuthal variation) results from heteroepitaxial semiconductor layers 2010 6 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Paskova, T. oth Wheeler, V.D. oth Grenko, J.A. oth Johnson, M.A.L. oth Udwary, K. oth Preble, E.A. oth Evans, K.R. oth Enthalten in Journal of crystal growth Amsterdam [u.a.] : Elsevier, 1967 312(2010), 7 vom: 15. März, Seite 886-892 (DE-627)129078514 (DE-600)3043-0 (DE-576)014411075 0022-0248 nnns volume:312 year:2010 number:7 day:15 month:03 pages:886-892 extent:6 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-GEO SSG-OLC-PHA SSG-OLC-DE-84 SSG-OPC-GGO GBV_ILN_22 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_4012 AR 312 2010 7 15 3 886-892 6
source	Enthalten in Journal of crystal growth 312(2010), 7 vom: 15. März, Seite 886-892 volume:312 year:2010 number:7 day:15 month:03 pages:886-892 extent:6
sourceStr	Enthalten in Journal of crystal growth 312(2010), 7 vom: 15. März, Seite 886-892 volume:312 year:2010 number:7 day:15 month:03 pages:886-892 extent:6
format_phy_str_mv	Article
institution	findex.gbv.de
dewey-raw	540
isfreeaccess_bool	false
container_title	Journal of crystal growth
authorswithroles_txt_mv	Lai, K.Y. @@aut@@ Paskova, T. @@oth@@ Wheeler, V.D. @@oth@@ Grenko, J.A. @@oth@@ Johnson, M.A.L. @@oth@@ Udwary, K. @@oth@@ Preble, E.A. @@oth@@ Evans, K.R. @@oth@@
publishDateDaySort_date	2010-03-15T00:00:00Z
hierarchy_top_id	129078514
dewey-sort	3540
id	OLC1836529856
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC1836529856</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230515192157.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">100302s2010 xx \|\|\|\|\| 00\| \|\|und c</controlfield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">sw100301_1</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1836529856</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1836529856</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">540</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Lai, K.Y.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="2"><subfield code="a">A quantitative model for the interpretation of RAV (rocking curve azimuthal variation) results from heteroepitaxial semiconductor layers</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2010</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">6</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Paskova, T.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wheeler, V.D.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Grenko, J.A.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Johnson, M.A.L.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Udwary, K.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Preble, E.A.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Evans, K.R.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of crystal growth</subfield><subfield code="d">Amsterdam [u.a.] : Elsevier, 1967</subfield><subfield code="g">312(2010), 7 vom: 15. März, Seite 886-892</subfield><subfield code="w">(DE-627)129078514</subfield><subfield code="w">(DE-600)3043-0</subfield><subfield code="w">(DE-576)014411075</subfield><subfield code="x">0022-0248</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:312</subfield><subfield code="g">year:2010</subfield><subfield code="g">number:7</subfield><subfield code="g">day:15</subfield><subfield code="g">month:03</subfield><subfield code="g">pages:886-892</subfield><subfield code="g">extent:6</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-CHE</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-GEO</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-DE-84</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OPC-GGO</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">312</subfield><subfield code="j">2010</subfield><subfield code="e">7</subfield><subfield code="b">15</subfield><subfield code="c">3</subfield><subfield code="h">886-892</subfield><subfield code="g">6</subfield></datafield></record></collection>
author	Lai, K.Y.
spellingShingle	Lai, K.Y. ddc 540 A quantitative model for the interpretation of RAV (rocking curve azimuthal variation) results from heteroepitaxial semiconductor layers
authorStr	Lai, K.Y.
ppnlink_with_tag_str_mv	@@773@@(DE-627)129078514
format	Article
dewey-ones	540 - Chemistry & allied sciences
delete_txt_mv	keep
author_role	aut
collection	OLC
remote_str	false
illustrated	Not Illustrated
issn	0022-0248
topic_title	540 A quantitative model for the interpretation of RAV (rocking curve azimuthal variation) results from heteroepitaxial semiconductor layers
topic	ddc 540
topic_unstemmed	ddc 540
topic_browse	ddc 540
format_facet	Aufsätze Gedruckte Aufsätze
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	nc
author2_variant	t p tp v w vw j g jg m j mj k u ku e p ep k e ke
hierarchy_parent_title	Journal of crystal growth
hierarchy_parent_id	129078514
dewey-tens	540 - Chemistry
hierarchy_top_title	Journal of crystal growth
isfreeaccess_txt	false
familylinks_str_mv	(DE-627)129078514 (DE-600)3043-0 (DE-576)014411075
title	A quantitative model for the interpretation of RAV (rocking curve azimuthal variation) results from heteroepitaxial semiconductor layers
ctrlnum	(DE-627)OLC1836529856 (DE-599)GBVOLC1836529856
title_full	A quantitative model for the interpretation of RAV (rocking curve azimuthal variation) results from heteroepitaxial semiconductor layers
author_sort	Lai, K.Y.
journal	Journal of crystal growth
journalStr	Journal of crystal growth
isOA_bool	false
dewey-hundreds	500 - Science
recordtype	marc
publishDateSort	2010
contenttype_str_mv	txt
container_start_page	886
author_browse	Lai, K.Y.
container_volume	312
physical	6
class	540
format_se	Aufsätze
author-letter	Lai, K.Y.
dewey-full	540
title_sort	quantitative model for the interpretation of rav (rocking curve azimuthal variation) results from heteroepitaxial semiconductor layers
title_auth	A quantitative model for the interpretation of RAV (rocking curve azimuthal variation) results from heteroepitaxial semiconductor layers
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-GEO SSG-OLC-PHA SSG-OLC-DE-84 SSG-OPC-GGO GBV_ILN_22 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_4012
container_issue	7
title_short	A quantitative model for the interpretation of RAV (rocking curve azimuthal variation) results from heteroepitaxial semiconductor layers
remote_bool	false
author2	Paskova, T. Wheeler, V.D. Grenko, J.A. Johnson, M.A.L. Udwary, K. Preble, E.A. Evans, K.R.
author2Str	Paskova, T. Wheeler, V.D. Grenko, J.A. Johnson, M.A.L. Udwary, K. Preble, E.A. Evans, K.R.
ppnlink	129078514
mediatype_str_mv	n
isOA_txt	false
hochschulschrift_bool	false
author2_role	oth oth oth oth oth oth oth
up_date	2024-07-04T00:57:01.432Z
_version_	1803607994734215168
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC1836529856</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230515192157.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">100302s2010 xx \|\|\|\|\| 00\| \|\|und c</controlfield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">sw100301_1</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1836529856</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1836529856</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">540</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Lai, K.Y.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="2"><subfield code="a">A quantitative model for the interpretation of RAV (rocking curve azimuthal variation) results from heteroepitaxial semiconductor layers</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2010</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">6</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Paskova, T.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wheeler, V.D.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Grenko, J.A.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Johnson, M.A.L.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Udwary, K.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Preble, E.A.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Evans, K.R.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of crystal growth</subfield><subfield code="d">Amsterdam [u.a.] : Elsevier, 1967</subfield><subfield code="g">312(2010), 7 vom: 15. März, Seite 886-892</subfield><subfield code="w">(DE-627)129078514</subfield><subfield code="w">(DE-600)3043-0</subfield><subfield code="w">(DE-576)014411075</subfield><subfield code="x">0022-0248</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:312</subfield><subfield code="g">year:2010</subfield><subfield code="g">number:7</subfield><subfield code="g">day:15</subfield><subfield code="g">month:03</subfield><subfield code="g">pages:886-892</subfield><subfield code="g">extent:6</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-CHE</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-GEO</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-DE-84</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OPC-GGO</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">312</subfield><subfield code="j">2010</subfield><subfield code="e">7</subfield><subfield code="b">15</subfield><subfield code="c">3</subfield><subfield code="h">886-892</subfield><subfield code="g">6</subfield></datafield></record></collection>
score	7.3990374

Nicht das Richtige dabei?

Schreiben Sie uns!

A quantitative model for the interpretation of RAV (rocking curve azimuthal variation) results from heteroepitaxial semiconductor layers

Nicht das Richtige dabei?

Zugang & Verfügbarkeit

Vorhandene Bände

Nicht das Richtige dabei?