Electrical and optical properties of p-GaN films implanted with transition metal impurities

Gespeichert in:

Autor*in:	Polyakov, A.Y. [verfasserIn] Smirnov, N.B. Govorkov, A.V. Pearton, S.J. Zavada, J.M.

Format:	Artikel

Erschienen:	2004

Umfang:	6

Übergeordnetes Werk:	Enthalten in: Journal of physics. Condensed matter - Bristol : IOP Publ. Ltd., 1989, 16(2004), 17, Seite 2967-2972
Übergeordnetes Werk:	volume:16 ; year:2004 ; number:17 ; pages:2967-2972 ; extent:6

Katalog-ID:	OLC1841719277

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spelling	swxx50 (DE-627)OLC1841719277 (DE-599)GBVOLC1841719277 DE-627 ger DE-627 rakwb 530 33.60 bkl 51.00 bkl Polyakov, A.Y. verfasserin aut Electrical and optical properties of p-GaN films implanted with transition metal impurities 2004 6 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Smirnov, N.B. oth Govorkov, A.V. oth Pearton, S.J. oth Zavada, J.M. oth Enthalten in Journal of physics. Condensed matter Bristol : IOP Publ. Ltd., 1989 16(2004), 17, Seite 2967-2972 (DE-627)129574139 (DE-600)228975-1 (DE-576)018623549 0953-8984 nnns volume:16 year:2004 number:17 pages:2967-2972 extent:6 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_31 GBV_ILN_40 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2006 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2185 GBV_ILN_4029 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4319 33.60 AVZ 51.00 AVZ AR 16 2004 17 2967-2972 6
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allfieldsGer	swxx50 (DE-627)OLC1841719277 (DE-599)GBVOLC1841719277 DE-627 ger DE-627 rakwb 530 33.60 bkl 51.00 bkl Polyakov, A.Y. verfasserin aut Electrical and optical properties of p-GaN films implanted with transition metal impurities 2004 6 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Smirnov, N.B. oth Govorkov, A.V. oth Pearton, S.J. oth Zavada, J.M. oth Enthalten in Journal of physics. Condensed matter Bristol : IOP Publ. Ltd., 1989 16(2004), 17, Seite 2967-2972 (DE-627)129574139 (DE-600)228975-1 (DE-576)018623549 0953-8984 nnns volume:16 year:2004 number:17 pages:2967-2972 extent:6 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_31 GBV_ILN_40 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2006 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2185 GBV_ILN_4029 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4319 33.60 AVZ 51.00 AVZ AR 16 2004 17 2967-2972 6
allfieldsSound	swxx50 (DE-627)OLC1841719277 (DE-599)GBVOLC1841719277 DE-627 ger DE-627 rakwb 530 33.60 bkl 51.00 bkl Polyakov, A.Y. verfasserin aut Electrical and optical properties of p-GaN films implanted with transition metal impurities 2004 6 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Smirnov, N.B. oth Govorkov, A.V. oth Pearton, S.J. oth Zavada, J.M. oth Enthalten in Journal of physics. Condensed matter Bristol : IOP Publ. Ltd., 1989 16(2004), 17, Seite 2967-2972 (DE-627)129574139 (DE-600)228975-1 (DE-576)018623549 0953-8984 nnns volume:16 year:2004 number:17 pages:2967-2972 extent:6 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_31 GBV_ILN_40 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2006 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2185 GBV_ILN_4029 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4319 33.60 AVZ 51.00 AVZ AR 16 2004 17 2967-2972 6
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Electrical and optical properties of p-GaN films implanted with transition metal impurities

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