Characteristic Enhancement of Solution-Processed In-Ga-Zn Oxide Thin-Film Transistors by Laser Annealing

Gespeichert in:

Autor*in:	Yang, Y-H [verfasserIn] Yang, S S Chou, K-S

Format:	Artikel

Erschienen:	2010

Umfang:	3

Übergeordnetes Werk:	Enthalten in: IEEE electron device letters - New York, NY : IEEE, 1980, 31(2010), 9, Seite 969-972
Übergeordnetes Werk:	volume:31 ; year:2010 ; number:9 ; pages:969-972 ; extent:3

Katalog-ID:	OLC1848546866

Internformat


LEADER	01000caa a22002652 4500
001	OLC1848546866
003	DE-627
005	20230711220936.0
007	tu
008	100909s2010 xx \|\|\|\|\| 00\| \|\|und c
028	5	2	\|a sw100908_1
035			\|a (DE-627)OLC1848546866
035			\|a (DE-599)GBVOLC1848546866
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
082	0	4	\|a 620
100	1		\|a Yang, Y-H \|e verfasserin \|4 aut
245	1	0	\|a Characteristic Enhancement of Solution-Processed In-Ga-Zn Oxide Thin-Film Transistors by Laser Annealing
264		1	\|c 2010
300			\|a 3
336			\|a Text \|b txt \|2 rdacontent
337			\|a ohne Hilfsmittel zu benutzen \|b n \|2 rdamedia
338			\|a Band \|b nc \|2 rdacarrier
700	1		\|a Yang, S S \|4 oth
700	1		\|a Chou, K-S \|4 oth
773	0	8	\|i Enthalten in \|t IEEE electron device letters \|d New York, NY : IEEE, 1980 \|g 31(2010), 9, Seite 969-972 \|w (DE-627)129618993 \|w (DE-600)245158-X \|w (DE-576)015122115 \|x 0193-8576 \|7 nnns
773	1	8	\|g volume:31 \|g year:2010 \|g number:9 \|g pages:969-972 \|g extent:3
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_OLC
912			\|a SSG-OLC-TEC
912			\|a GBV_ILN_22
912			\|a GBV_ILN_70
912			\|a GBV_ILN_170
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_4266
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4314
951			\|a AR
952			\|d 31 \|j 2010 \|e 9 \|h 969-972 \|g 3

Indexfelder

author_variant	y h y yhy
matchkey_str	article:01938576:2010----::hrceitcnacmnosltopoesdnanxdtiflta
hierarchy_sort_str	2010
publishDate	2010
allfields	sw100908_1 (DE-627)OLC1848546866 (DE-599)GBVOLC1848546866 DE-627 ger DE-627 rakwb 620 Yang, Y-H verfasserin aut Characteristic Enhancement of Solution-Processed In-Ga-Zn Oxide Thin-Film Transistors by Laser Annealing 2010 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Yang, S S oth Chou, K-S oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 31(2010), 9, Seite 969-972 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:31 year:2010 number:9 pages:969-972 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_22 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2061 GBV_ILN_4266 GBV_ILN_4313 GBV_ILN_4314 AR 31 2010 9 969-972 3
spelling	sw100908_1 (DE-627)OLC1848546866 (DE-599)GBVOLC1848546866 DE-627 ger DE-627 rakwb 620 Yang, Y-H verfasserin aut Characteristic Enhancement of Solution-Processed In-Ga-Zn Oxide Thin-Film Transistors by Laser Annealing 2010 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Yang, S S oth Chou, K-S oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 31(2010), 9, Seite 969-972 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:31 year:2010 number:9 pages:969-972 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_22 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2061 GBV_ILN_4266 GBV_ILN_4313 GBV_ILN_4314 AR 31 2010 9 969-972 3
allfields_unstemmed	sw100908_1 (DE-627)OLC1848546866 (DE-599)GBVOLC1848546866 DE-627 ger DE-627 rakwb 620 Yang, Y-H verfasserin aut Characteristic Enhancement of Solution-Processed In-Ga-Zn Oxide Thin-Film Transistors by Laser Annealing 2010 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Yang, S S oth Chou, K-S oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 31(2010), 9, Seite 969-972 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:31 year:2010 number:9 pages:969-972 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_22 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2061 GBV_ILN_4266 GBV_ILN_4313 GBV_ILN_4314 AR 31 2010 9 969-972 3
allfieldsGer	sw100908_1 (DE-627)OLC1848546866 (DE-599)GBVOLC1848546866 DE-627 ger DE-627 rakwb 620 Yang, Y-H verfasserin aut Characteristic Enhancement of Solution-Processed In-Ga-Zn Oxide Thin-Film Transistors by Laser Annealing 2010 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Yang, S S oth Chou, K-S oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 31(2010), 9, Seite 969-972 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:31 year:2010 number:9 pages:969-972 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_22 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2061 GBV_ILN_4266 GBV_ILN_4313 GBV_ILN_4314 AR 31 2010 9 969-972 3
allfieldsSound	sw100908_1 (DE-627)OLC1848546866 (DE-599)GBVOLC1848546866 DE-627 ger DE-627 rakwb 620 Yang, Y-H verfasserin aut Characteristic Enhancement of Solution-Processed In-Ga-Zn Oxide Thin-Film Transistors by Laser Annealing 2010 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Yang, S S oth Chou, K-S oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 31(2010), 9, Seite 969-972 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:31 year:2010 number:9 pages:969-972 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_22 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2061 GBV_ILN_4266 GBV_ILN_4313 GBV_ILN_4314 AR 31 2010 9 969-972 3
source	Enthalten in IEEE electron device letters 31(2010), 9, Seite 969-972 volume:31 year:2010 number:9 pages:969-972 extent:3
sourceStr	Enthalten in IEEE electron device letters 31(2010), 9, Seite 969-972 volume:31 year:2010 number:9 pages:969-972 extent:3
format_phy_str_mv	Article
institution	findex.gbv.de
dewey-raw	620
isfreeaccess_bool	false
container_title	IEEE electron device letters
authorswithroles_txt_mv	Yang, Y-H @@aut@@ Yang, S S @@oth@@ Chou, K-S @@oth@@
publishDateDaySort_date	2010-01-01T00:00:00Z
hierarchy_top_id	129618993
dewey-sort	3620
id	OLC1848546866
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC1848546866</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230711220936.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">100909s2010 xx \|\|\|\|\| 00\| \|\|und c</controlfield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">sw100908_1</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1848546866</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1848546866</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">620</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Yang, Y-H</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Characteristic Enhancement of Solution-Processed In-Ga-Zn Oxide Thin-Film Transistors by Laser Annealing</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2010</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">3</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yang, S S</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Chou, K-S</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">IEEE electron device letters</subfield><subfield code="d">New York, NY : IEEE, 1980</subfield><subfield code="g">31(2010), 9, Seite 969-972</subfield><subfield code="w">(DE-627)129618993</subfield><subfield code="w">(DE-600)245158-X</subfield><subfield code="w">(DE-576)015122115</subfield><subfield code="x">0193-8576</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:31</subfield><subfield code="g">year:2010</subfield><subfield code="g">number:9</subfield><subfield code="g">pages:969-972</subfield><subfield code="g">extent:3</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4266</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4314</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">31</subfield><subfield code="j">2010</subfield><subfield code="e">9</subfield><subfield code="h">969-972</subfield><subfield code="g">3</subfield></datafield></record></collection>
author	Yang, Y-H
spellingShingle	Yang, Y-H ddc 620 Characteristic Enhancement of Solution-Processed In-Ga-Zn Oxide Thin-Film Transistors by Laser Annealing
authorStr	Yang, Y-H
ppnlink_with_tag_str_mv	@@773@@(DE-627)129618993
format	Article
dewey-ones	620 - Engineering & allied operations
delete_txt_mv	keep
author_role	aut
collection	OLC
remote_str	false
illustrated	Not Illustrated
issn	0193-8576
topic_title	620 Characteristic Enhancement of Solution-Processed In-Ga-Zn Oxide Thin-Film Transistors by Laser Annealing
topic	ddc 620
topic_unstemmed	ddc 620
topic_browse	ddc 620
format_facet	Aufsätze Gedruckte Aufsätze
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	nc
author2_variant	s s y ss ssy k s c ksc
hierarchy_parent_title	IEEE electron device letters
hierarchy_parent_id	129618993
dewey-tens	620 - Engineering
hierarchy_top_title	IEEE electron device letters
isfreeaccess_txt	false
familylinks_str_mv	(DE-627)129618993 (DE-600)245158-X (DE-576)015122115
title	Characteristic Enhancement of Solution-Processed In-Ga-Zn Oxide Thin-Film Transistors by Laser Annealing
ctrlnum	(DE-627)OLC1848546866 (DE-599)GBVOLC1848546866
title_full	Characteristic Enhancement of Solution-Processed In-Ga-Zn Oxide Thin-Film Transistors by Laser Annealing
author_sort	Yang, Y-H
journal	IEEE electron device letters
journalStr	IEEE electron device letters
isOA_bool	false
dewey-hundreds	600 - Technology
recordtype	marc
publishDateSort	2010
contenttype_str_mv	txt
container_start_page	969
author_browse	Yang, Y-H
container_volume	31
physical	3
class	620
format_se	Aufsätze
author-letter	Yang, Y-H
dewey-full	620
title_sort	characteristic enhancement of solution-processed in-ga-zn oxide thin-film transistors by laser annealing
title_auth	Characteristic Enhancement of Solution-Processed In-Ga-Zn Oxide Thin-Film Transistors by Laser Annealing
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_22 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2061 GBV_ILN_4266 GBV_ILN_4313 GBV_ILN_4314
container_issue	9
title_short	Characteristic Enhancement of Solution-Processed In-Ga-Zn Oxide Thin-Film Transistors by Laser Annealing
remote_bool	false
author2	Yang, S S Chou, K-S
author2Str	Yang, S S Chou, K-S
ppnlink	129618993
mediatype_str_mv	n
isOA_txt	false
hochschulschrift_bool	false
author2_role	oth oth
up_date	2024-07-03T14:48:32.544Z
_version_	1803569712375791616
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC1848546866</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230711220936.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">100909s2010 xx \|\|\|\|\| 00\| \|\|und c</controlfield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">sw100908_1</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1848546866</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1848546866</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">620</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Yang, Y-H</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Characteristic Enhancement of Solution-Processed In-Ga-Zn Oxide Thin-Film Transistors by Laser Annealing</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2010</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">3</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yang, S S</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Chou, K-S</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">IEEE electron device letters</subfield><subfield code="d">New York, NY : IEEE, 1980</subfield><subfield code="g">31(2010), 9, Seite 969-972</subfield><subfield code="w">(DE-627)129618993</subfield><subfield code="w">(DE-600)245158-X</subfield><subfield code="w">(DE-576)015122115</subfield><subfield code="x">0193-8576</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:31</subfield><subfield code="g">year:2010</subfield><subfield code="g">number:9</subfield><subfield code="g">pages:969-972</subfield><subfield code="g">extent:3</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4266</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4314</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">31</subfield><subfield code="j">2010</subfield><subfield code="e">9</subfield><subfield code="h">969-972</subfield><subfield code="g">3</subfield></datafield></record></collection>
score	7.4025803

Nicht das Richtige dabei?

Schreiben Sie uns!

Characteristic Enhancement of Solution-Processed In-Ga-Zn Oxide Thin-Film Transistors by Laser Annealing

Nicht das Richtige dabei?

Zugang & Verfügbarkeit

Vorhandene Bände

Nicht das Richtige dabei?