Low-Frequency Noise Performance of a Bilayer InZnO-InGaZnO Thin-Film Transistor for Analog Device Applications

Gespeichert in:

Autor*in:	Jeon, S [verfasserIn] Kim, S I Park, S Song, I Park, J Kim, S Kim, C

Format:	Artikel

Erschienen:	2010

Umfang:	3

Übergeordnetes Werk:	Enthalten in: IEEE electron device letters - New York, NY : IEEE, 1980, 31(2010), 10, Seite 1128-1131
Übergeordnetes Werk:	volume:31 ; year:2010 ; number:10 ; pages:1128-1131 ; extent:3

Katalog-ID:	OLC1850426805

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