Growth and properties of vertically well-aligned GaN nanowires by thermal chemical vapor deposition process

Gespeichert in:

Autor*in:	Kang, S.M. [verfasserIn] Kang, B.K. Yoon, D.H.

Format:	Artikel

Erschienen:	2011

Umfang:	3

Übergeordnetes Werk:	Enthalten in: Materials letters - New York, NY [u.a.] : Elsevier, 1982, 65(2011), 4 vom: 28. Feb., Seite 763-766
Übergeordnetes Werk:	volume:65 ; year:2011 ; number:4 ; day:28 ; month:02 ; pages:763-766 ; extent:3

Katalog-ID:	OLC185746625X

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