The influence of electron-beam irradiation on electrical characteristics of metal–insulator–semiconductor capacitors based on a high-k dielectric stack of HfTiSiO(N) and HfTiO(N) layers

Gespeichert in:

Autor*in:	Thangadurai, P. [verfasserIn] Kaplan, W.D. Mikhelashvili, V. Eisenstein, G.

Format:	Artikel

Erschienen:	2009

Umfang:	5

Übergeordnetes Werk:	Enthalten in: Microelectronics reliability - Amsterdam [u.a.] : Elsevier, 1964, 49(2009), 7 vom: Juli, Seite 716-721
Übergeordnetes Werk:	volume:49 ; year:2009 ; number:7 ; month:07 ; pages:716-721 ; extent:5

Katalog-ID:	OLC1862053111

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title_sort	influence of electron-beam irradiation on electrical characteristics of metal–insulator–semiconductor capacitors based on a high-k dielectric stack of hftisio(n) and hftio(n) layers
title_auth	The influence of electron-beam irradiation on electrical characteristics of metal–insulator–semiconductor capacitors based on a high-k dielectric stack of HfTiSiO(N) and HfTiO(N) layers
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