Electrical method of measuring physical thickness and nitrogen concentration of silicon oxynitride gate dielectric for MOSFETs

Gespeichert in:

Autor*in:	Do, J.H. [verfasserIn] Kang, H.S. Kang, B.K.

Format:	Artikel

Erschienen:	2008

Umfang:	6

Übergeordnetes Werk:	Enthalten in: Microelectronic engineering - Amsterdam [u.a.] : Elsevier, 1983, 85(2008), 8 vom: Aug., Seite 1820-1826
Übergeordnetes Werk:	volume:85 ; year:2008 ; number:8 ; month:08 ; pages:1820-1826 ; extent:6

Katalog-ID:	OLC1865337374

Internformat


LEADER	01000caa a22002652 4500
001	OLC1865337374
003	DE-627
005	20220221201816.0
007	tu
008	110329s2008 xx \|\|\|\|\| 00\| \|\|und c
028	5	2	\|a sw110327_1
035			\|a (DE-627)OLC1865337374
035			\|a (DE-599)GBVOLC1865337374
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
082	0	4	\|a 620
084			\|a 53.51 \|2 bkl
084			\|a 53.56 \|2 bkl
084			\|a 53.52 \|2 bkl
084			\|a 50.94 \|2 bkl
100	1		\|a Do, J.H. \|e verfasserin \|4 aut
245	1	0	\|a Electrical method of measuring physical thickness and nitrogen concentration of silicon oxynitride gate dielectric for MOSFETs
264		1	\|c 2008
300			\|a 6
336			\|a Text \|b txt \|2 rdacontent
337			\|a ohne Hilfsmittel zu benutzen \|b n \|2 rdamedia
338			\|a Band \|b nc \|2 rdacarrier
700	1		\|a Kang, H.S. \|4 oth
700	1		\|a Kang, B.K. \|4 oth
773	0	8	\|i Enthalten in \|t Microelectronic engineering \|d Amsterdam [u.a.] : Elsevier, 1983 \|g 85(2008), 8 vom: Aug., Seite 1820-1826 \|w (DE-627)130400688 \|w (DE-600)605230-7 \|w (DE-576)015903680 \|x 0167-9317 \|7 nnns
773	1	8	\|g volume:85 \|g year:2008 \|g number:8 \|g month:08 \|g pages:1820-1826 \|g extent:6
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_OLC
912			\|a SSG-OLC-TEC
912			\|a GBV_ILN_32
912			\|a GBV_ILN_70
912			\|a GBV_ILN_150
912			\|a GBV_ILN_2002
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2006
912			\|a GBV_ILN_4316
936	b	k	\|a 53.51 \|q AVZ
936	b	k	\|a 53.56 \|q AVZ
936	b	k	\|a 53.52 \|q AVZ
936	b	k	\|a 50.94 \|q AVZ
951			\|a AR
952			\|d 85 \|j 2008 \|e 8 \|c 8 \|h 1820-1826 \|g 6

Indexfelder

author_variant	j d jd
matchkey_str	article:01679317:2008----::lcrclehdfesrnpyiatikesnntoecnetainfiiooy
hierarchy_sort_str	2008
bklnumber	53.51 53.56 53.52 50.94
publishDate	2008
allfields	sw110327_1 (DE-627)OLC1865337374 (DE-599)GBVOLC1865337374 DE-627 ger DE-627 rakwb 620 53.51 bkl 53.56 bkl 53.52 bkl 50.94 bkl Do, J.H. verfasserin aut Electrical method of measuring physical thickness and nitrogen concentration of silicon oxynitride gate dielectric for MOSFETs 2008 6 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Kang, H.S. oth Kang, B.K. oth Enthalten in Microelectronic engineering Amsterdam [u.a.] : Elsevier, 1983 85(2008), 8 vom: Aug., Seite 1820-1826 (DE-627)130400688 (DE-600)605230-7 (DE-576)015903680 0167-9317 nnns volume:85 year:2008 number:8 month:08 pages:1820-1826 extent:6 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_32 GBV_ILN_70 GBV_ILN_150 GBV_ILN_2002 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_4316 53.51 AVZ 53.56 AVZ 53.52 AVZ 50.94 AVZ AR 85 2008 8 8 1820-1826 6
spelling	sw110327_1 (DE-627)OLC1865337374 (DE-599)GBVOLC1865337374 DE-627 ger DE-627 rakwb 620 53.51 bkl 53.56 bkl 53.52 bkl 50.94 bkl Do, J.H. verfasserin aut Electrical method of measuring physical thickness and nitrogen concentration of silicon oxynitride gate dielectric for MOSFETs 2008 6 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Kang, H.S. oth Kang, B.K. oth Enthalten in Microelectronic engineering Amsterdam [u.a.] : Elsevier, 1983 85(2008), 8 vom: Aug., Seite 1820-1826 (DE-627)130400688 (DE-600)605230-7 (DE-576)015903680 0167-9317 nnns volume:85 year:2008 number:8 month:08 pages:1820-1826 extent:6 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_32 GBV_ILN_70 GBV_ILN_150 GBV_ILN_2002 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_4316 53.51 AVZ 53.56 AVZ 53.52 AVZ 50.94 AVZ AR 85 2008 8 8 1820-1826 6
allfields_unstemmed	sw110327_1 (DE-627)OLC1865337374 (DE-599)GBVOLC1865337374 DE-627 ger DE-627 rakwb 620 53.51 bkl 53.56 bkl 53.52 bkl 50.94 bkl Do, J.H. verfasserin aut Electrical method of measuring physical thickness and nitrogen concentration of silicon oxynitride gate dielectric for MOSFETs 2008 6 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Kang, H.S. oth Kang, B.K. oth Enthalten in Microelectronic engineering Amsterdam [u.a.] : Elsevier, 1983 85(2008), 8 vom: Aug., Seite 1820-1826 (DE-627)130400688 (DE-600)605230-7 (DE-576)015903680 0167-9317 nnns volume:85 year:2008 number:8 month:08 pages:1820-1826 extent:6 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_32 GBV_ILN_70 GBV_ILN_150 GBV_ILN_2002 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_4316 53.51 AVZ 53.56 AVZ 53.52 AVZ 50.94 AVZ AR 85 2008 8 8 1820-1826 6
allfieldsGer	sw110327_1 (DE-627)OLC1865337374 (DE-599)GBVOLC1865337374 DE-627 ger DE-627 rakwb 620 53.51 bkl 53.56 bkl 53.52 bkl 50.94 bkl Do, J.H. verfasserin aut Electrical method of measuring physical thickness and nitrogen concentration of silicon oxynitride gate dielectric for MOSFETs 2008 6 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Kang, H.S. oth Kang, B.K. oth Enthalten in Microelectronic engineering Amsterdam [u.a.] : Elsevier, 1983 85(2008), 8 vom: Aug., Seite 1820-1826 (DE-627)130400688 (DE-600)605230-7 (DE-576)015903680 0167-9317 nnns volume:85 year:2008 number:8 month:08 pages:1820-1826 extent:6 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_32 GBV_ILN_70 GBV_ILN_150 GBV_ILN_2002 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_4316 53.51 AVZ 53.56 AVZ 53.52 AVZ 50.94 AVZ AR 85 2008 8 8 1820-1826 6
allfieldsSound	sw110327_1 (DE-627)OLC1865337374 (DE-599)GBVOLC1865337374 DE-627 ger DE-627 rakwb 620 53.51 bkl 53.56 bkl 53.52 bkl 50.94 bkl Do, J.H. verfasserin aut Electrical method of measuring physical thickness and nitrogen concentration of silicon oxynitride gate dielectric for MOSFETs 2008 6 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Kang, H.S. oth Kang, B.K. oth Enthalten in Microelectronic engineering Amsterdam [u.a.] : Elsevier, 1983 85(2008), 8 vom: Aug., Seite 1820-1826 (DE-627)130400688 (DE-600)605230-7 (DE-576)015903680 0167-9317 nnns volume:85 year:2008 number:8 month:08 pages:1820-1826 extent:6 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_32 GBV_ILN_70 GBV_ILN_150 GBV_ILN_2002 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_4316 53.51 AVZ 53.56 AVZ 53.52 AVZ 50.94 AVZ AR 85 2008 8 8 1820-1826 6
source	Enthalten in Microelectronic engineering 85(2008), 8 vom: Aug., Seite 1820-1826 volume:85 year:2008 number:8 month:08 pages:1820-1826 extent:6
sourceStr	Enthalten in Microelectronic engineering 85(2008), 8 vom: Aug., Seite 1820-1826 volume:85 year:2008 number:8 month:08 pages:1820-1826 extent:6
format_phy_str_mv	Article
institution	findex.gbv.de
dewey-raw	620
isfreeaccess_bool	false
container_title	Microelectronic engineering
authorswithroles_txt_mv	Do, J.H. @@aut@@ Kang, H.S. @@oth@@ Kang, B.K. @@oth@@
publishDateDaySort_date	2008-08-01T00:00:00Z
hierarchy_top_id	130400688
dewey-sort	3620
id	OLC1865337374
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC1865337374</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220221201816.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">110329s2008 xx \|\|\|\|\| 00\| \|\|und c</controlfield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">sw110327_1</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1865337374</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1865337374</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">620</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.51</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.56</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.52</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">50.94</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Do, J.H.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Electrical method of measuring physical thickness and nitrogen concentration of silicon oxynitride gate dielectric for MOSFETs</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2008</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">6</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kang, H.S.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kang, B.K.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Microelectronic engineering</subfield><subfield code="d">Amsterdam [u.a.] : Elsevier, 1983</subfield><subfield code="g">85(2008), 8 vom: Aug., Seite 1820-1826</subfield><subfield code="w">(DE-627)130400688</subfield><subfield code="w">(DE-600)605230-7</subfield><subfield code="w">(DE-576)015903680</subfield><subfield code="x">0167-9317</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:85</subfield><subfield code="g">year:2008</subfield><subfield code="g">number:8</subfield><subfield code="g">month:08</subfield><subfield code="g">pages:1820-1826</subfield><subfield code="g">extent:6</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2002</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4316</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">53.51</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">53.56</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">53.52</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">50.94</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">85</subfield><subfield code="j">2008</subfield><subfield code="e">8</subfield><subfield code="c">8</subfield><subfield code="h">1820-1826</subfield><subfield code="g">6</subfield></datafield></record></collection>
author	Do, J.H.
spellingShingle	Do, J.H. ddc 620 bkl 53.51 bkl 53.56 bkl 53.52 bkl 50.94 Electrical method of measuring physical thickness and nitrogen concentration of silicon oxynitride gate dielectric for MOSFETs
authorStr	Do, J.H.
ppnlink_with_tag_str_mv	@@773@@(DE-627)130400688
format	Article
dewey-ones	620 - Engineering & allied operations
delete_txt_mv	keep
author_role	aut
collection	OLC
remote_str	false
illustrated	Not Illustrated
issn	0167-9317
topic_title	620 53.51 bkl 53.56 bkl 53.52 bkl 50.94 bkl Electrical method of measuring physical thickness and nitrogen concentration of silicon oxynitride gate dielectric for MOSFETs
topic	ddc 620 bkl 53.51 bkl 53.56 bkl 53.52 bkl 50.94
topic_unstemmed	ddc 620 bkl 53.51 bkl 53.56 bkl 53.52 bkl 50.94
topic_browse	ddc 620 bkl 53.51 bkl 53.56 bkl 53.52 bkl 50.94
format_facet	Aufsätze Gedruckte Aufsätze
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	nc
author2_variant	h k hk b k bk
hierarchy_parent_title	Microelectronic engineering
hierarchy_parent_id	130400688
dewey-tens	620 - Engineering
hierarchy_top_title	Microelectronic engineering
isfreeaccess_txt	false
familylinks_str_mv	(DE-627)130400688 (DE-600)605230-7 (DE-576)015903680
title	Electrical method of measuring physical thickness and nitrogen concentration of silicon oxynitride gate dielectric for MOSFETs
ctrlnum	(DE-627)OLC1865337374 (DE-599)GBVOLC1865337374
title_full	Electrical method of measuring physical thickness and nitrogen concentration of silicon oxynitride gate dielectric for MOSFETs
author_sort	Do, J.H.
journal	Microelectronic engineering
journalStr	Microelectronic engineering
isOA_bool	false
dewey-hundreds	600 - Technology
recordtype	marc
publishDateSort	2008
contenttype_str_mv	txt
container_start_page	1820
author_browse	Do, J.H.
container_volume	85
physical	6
class	620 53.51 bkl 53.56 bkl 53.52 bkl 50.94 bkl
format_se	Aufsätze
author-letter	Do, J.H.
dewey-full	620
title_sort	electrical method of measuring physical thickness and nitrogen concentration of silicon oxynitride gate dielectric for mosfets
title_auth	Electrical method of measuring physical thickness and nitrogen concentration of silicon oxynitride gate dielectric for MOSFETs
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_32 GBV_ILN_70 GBV_ILN_150 GBV_ILN_2002 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_4316
container_issue	8
title_short	Electrical method of measuring physical thickness and nitrogen concentration of silicon oxynitride gate dielectric for MOSFETs
remote_bool	false
author2	Kang, H.S. Kang, B.K.
author2Str	Kang, H.S. Kang, B.K.
ppnlink	130400688
mediatype_str_mv	n
isOA_txt	false
hochschulschrift_bool	false
author2_role	oth oth
up_date	2024-07-03T17:57:08.162Z
_version_	1803581577669640192
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC1865337374</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220221201816.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">110329s2008 xx \|\|\|\|\| 00\| \|\|und c</controlfield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">sw110327_1</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1865337374</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1865337374</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">620</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.51</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.56</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.52</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">50.94</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Do, J.H.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Electrical method of measuring physical thickness and nitrogen concentration of silicon oxynitride gate dielectric for MOSFETs</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2008</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">6</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kang, H.S.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kang, B.K.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Microelectronic engineering</subfield><subfield code="d">Amsterdam [u.a.] : Elsevier, 1983</subfield><subfield code="g">85(2008), 8 vom: Aug., Seite 1820-1826</subfield><subfield code="w">(DE-627)130400688</subfield><subfield code="w">(DE-600)605230-7</subfield><subfield code="w">(DE-576)015903680</subfield><subfield code="x">0167-9317</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:85</subfield><subfield code="g">year:2008</subfield><subfield code="g">number:8</subfield><subfield code="g">month:08</subfield><subfield code="g">pages:1820-1826</subfield><subfield code="g">extent:6</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2002</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4316</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">53.51</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">53.56</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">53.52</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">50.94</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">85</subfield><subfield code="j">2008</subfield><subfield code="e">8</subfield><subfield code="c">8</subfield><subfield code="h">1820-1826</subfield><subfield code="g">6</subfield></datafield></record></collection>
score	7.4020147

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