Porous silicon for the development of capacitive microstructures

Gespeichert in:

Autor*in:	Sancho, A. [verfasserIn] Arizti, F. Gracia, F.J.

Format:	Artikel

Erschienen:	2009

Umfang:	5

Übergeordnetes Werk:	Enthalten in: Microelectronic engineering - Amsterdam [u.a.] : Elsevier, 1983, 86(2009), 11 vom: Nov., Seite 2144-2149
Übergeordnetes Werk:	volume:86 ; year:2009 ; number:11 ; month:11 ; pages:2144-2149 ; extent:5

Katalog-ID:	OLC1865337668

Internformat


LEADER	01000caa a22002652 4500
001	OLC1865337668
003	DE-627
005	20220221201843.0
007	tu
008	110329s2009 xx \|\|\|\|\| 00\| \|\|und c
028	5	2	\|a sw110327_1
035			\|a (DE-627)OLC1865337668
035			\|a (DE-599)GBVOLC1865337668
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
082	0	4	\|a 620
084			\|a 53.51 \|2 bkl
084			\|a 53.56 \|2 bkl
084			\|a 53.52 \|2 bkl
084			\|a 50.94 \|2 bkl
100	1		\|a Sancho, A. \|e verfasserin \|4 aut
245	1	0	\|a Porous silicon for the development of capacitive microstructures
264		1	\|c 2009
300			\|a 5
336			\|a Text \|b txt \|2 rdacontent
337			\|a ohne Hilfsmittel zu benutzen \|b n \|2 rdamedia
338			\|a Band \|b nc \|2 rdacarrier
700	1		\|a Arizti, F. \|4 oth
700	1		\|a Gracia, F.J. \|4 oth
773	0	8	\|i Enthalten in \|t Microelectronic engineering \|d Amsterdam [u.a.] : Elsevier, 1983 \|g 86(2009), 11 vom: Nov., Seite 2144-2149 \|w (DE-627)130400688 \|w (DE-600)605230-7 \|w (DE-576)015903680 \|x 0167-9317 \|7 nnns
773	1	8	\|g volume:86 \|g year:2009 \|g number:11 \|g month:11 \|g pages:2144-2149 \|g extent:5
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_OLC
912			\|a SSG-OLC-TEC
912			\|a GBV_ILN_32
912			\|a GBV_ILN_70
912			\|a GBV_ILN_150
912			\|a GBV_ILN_170
912			\|a GBV_ILN_2002
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2006
912			\|a GBV_ILN_4316
936	b	k	\|a 53.51 \|q AVZ
936	b	k	\|a 53.56 \|q AVZ
936	b	k	\|a 53.52 \|q AVZ
936	b	k	\|a 50.94 \|q AVZ
951			\|a AR
952			\|d 86 \|j 2009 \|e 11 \|c 11 \|h 2144-2149 \|g 5

Indexfelder

author_variant	a s as
matchkey_str	article:01679317:2009----::oosiiofrhdvlpetfaaiie
hierarchy_sort_str	2009
bklnumber	53.51 53.56 53.52 50.94
publishDate	2009
allfields	sw110327_1 (DE-627)OLC1865337668 (DE-599)GBVOLC1865337668 DE-627 ger DE-627 rakwb 620 53.51 bkl 53.56 bkl 53.52 bkl 50.94 bkl Sancho, A. verfasserin aut Porous silicon for the development of capacitive microstructures 2009 5 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Arizti, F. oth Gracia, F.J. oth Enthalten in Microelectronic engineering Amsterdam [u.a.] : Elsevier, 1983 86(2009), 11 vom: Nov., Seite 2144-2149 (DE-627)130400688 (DE-600)605230-7 (DE-576)015903680 0167-9317 nnns volume:86 year:2009 number:11 month:11 pages:2144-2149 extent:5 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_32 GBV_ILN_70 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_4316 53.51 AVZ 53.56 AVZ 53.52 AVZ 50.94 AVZ AR 86 2009 11 11 2144-2149 5
spelling	sw110327_1 (DE-627)OLC1865337668 (DE-599)GBVOLC1865337668 DE-627 ger DE-627 rakwb 620 53.51 bkl 53.56 bkl 53.52 bkl 50.94 bkl Sancho, A. verfasserin aut Porous silicon for the development of capacitive microstructures 2009 5 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Arizti, F. oth Gracia, F.J. oth Enthalten in Microelectronic engineering Amsterdam [u.a.] : Elsevier, 1983 86(2009), 11 vom: Nov., Seite 2144-2149 (DE-627)130400688 (DE-600)605230-7 (DE-576)015903680 0167-9317 nnns volume:86 year:2009 number:11 month:11 pages:2144-2149 extent:5 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_32 GBV_ILN_70 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_4316 53.51 AVZ 53.56 AVZ 53.52 AVZ 50.94 AVZ AR 86 2009 11 11 2144-2149 5
allfields_unstemmed	sw110327_1 (DE-627)OLC1865337668 (DE-599)GBVOLC1865337668 DE-627 ger DE-627 rakwb 620 53.51 bkl 53.56 bkl 53.52 bkl 50.94 bkl Sancho, A. verfasserin aut Porous silicon for the development of capacitive microstructures 2009 5 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Arizti, F. oth Gracia, F.J. oth Enthalten in Microelectronic engineering Amsterdam [u.a.] : Elsevier, 1983 86(2009), 11 vom: Nov., Seite 2144-2149 (DE-627)130400688 (DE-600)605230-7 (DE-576)015903680 0167-9317 nnns volume:86 year:2009 number:11 month:11 pages:2144-2149 extent:5 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_32 GBV_ILN_70 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_4316 53.51 AVZ 53.56 AVZ 53.52 AVZ 50.94 AVZ AR 86 2009 11 11 2144-2149 5
allfieldsGer	sw110327_1 (DE-627)OLC1865337668 (DE-599)GBVOLC1865337668 DE-627 ger DE-627 rakwb 620 53.51 bkl 53.56 bkl 53.52 bkl 50.94 bkl Sancho, A. verfasserin aut Porous silicon for the development of capacitive microstructures 2009 5 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Arizti, F. oth Gracia, F.J. oth Enthalten in Microelectronic engineering Amsterdam [u.a.] : Elsevier, 1983 86(2009), 11 vom: Nov., Seite 2144-2149 (DE-627)130400688 (DE-600)605230-7 (DE-576)015903680 0167-9317 nnns volume:86 year:2009 number:11 month:11 pages:2144-2149 extent:5 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_32 GBV_ILN_70 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_4316 53.51 AVZ 53.56 AVZ 53.52 AVZ 50.94 AVZ AR 86 2009 11 11 2144-2149 5
allfieldsSound	sw110327_1 (DE-627)OLC1865337668 (DE-599)GBVOLC1865337668 DE-627 ger DE-627 rakwb 620 53.51 bkl 53.56 bkl 53.52 bkl 50.94 bkl Sancho, A. verfasserin aut Porous silicon for the development of capacitive microstructures 2009 5 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Arizti, F. oth Gracia, F.J. oth Enthalten in Microelectronic engineering Amsterdam [u.a.] : Elsevier, 1983 86(2009), 11 vom: Nov., Seite 2144-2149 (DE-627)130400688 (DE-600)605230-7 (DE-576)015903680 0167-9317 nnns volume:86 year:2009 number:11 month:11 pages:2144-2149 extent:5 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_32 GBV_ILN_70 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_4316 53.51 AVZ 53.56 AVZ 53.52 AVZ 50.94 AVZ AR 86 2009 11 11 2144-2149 5
source	Enthalten in Microelectronic engineering 86(2009), 11 vom: Nov., Seite 2144-2149 volume:86 year:2009 number:11 month:11 pages:2144-2149 extent:5
sourceStr	Enthalten in Microelectronic engineering 86(2009), 11 vom: Nov., Seite 2144-2149 volume:86 year:2009 number:11 month:11 pages:2144-2149 extent:5
format_phy_str_mv	Article
institution	findex.gbv.de
dewey-raw	620
isfreeaccess_bool	false
container_title	Microelectronic engineering
authorswithroles_txt_mv	Sancho, A. @@aut@@ Arizti, F. @@oth@@ Gracia, F.J. @@oth@@
publishDateDaySort_date	2009-11-01T00:00:00Z
hierarchy_top_id	130400688
dewey-sort	3620
id	OLC1865337668
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC1865337668</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220221201843.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">110329s2009 xx \|\|\|\|\| 00\| \|\|und c</controlfield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">sw110327_1</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1865337668</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1865337668</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">620</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.51</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.56</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.52</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">50.94</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Sancho, A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Porous silicon for the development of capacitive microstructures</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2009</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">5</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Arizti, F.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Gracia, F.J.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Microelectronic engineering</subfield><subfield code="d">Amsterdam [u.a.] : Elsevier, 1983</subfield><subfield code="g">86(2009), 11 vom: Nov., Seite 2144-2149</subfield><subfield code="w">(DE-627)130400688</subfield><subfield code="w">(DE-600)605230-7</subfield><subfield code="w">(DE-576)015903680</subfield><subfield code="x">0167-9317</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:86</subfield><subfield code="g">year:2009</subfield><subfield code="g">number:11</subfield><subfield code="g">month:11</subfield><subfield code="g">pages:2144-2149</subfield><subfield code="g">extent:5</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2002</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4316</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">53.51</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">53.56</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">53.52</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">50.94</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">86</subfield><subfield code="j">2009</subfield><subfield code="e">11</subfield><subfield code="c">11</subfield><subfield code="h">2144-2149</subfield><subfield code="g">5</subfield></datafield></record></collection>
author	Sancho, A.
spellingShingle	Sancho, A. ddc 620 bkl 53.51 bkl 53.56 bkl 53.52 bkl 50.94 Porous silicon for the development of capacitive microstructures
authorStr	Sancho, A.
ppnlink_with_tag_str_mv	@@773@@(DE-627)130400688
format	Article
dewey-ones	620 - Engineering & allied operations
delete_txt_mv	keep
author_role	aut
collection	OLC
remote_str	false
illustrated	Not Illustrated
issn	0167-9317
topic_title	620 53.51 bkl 53.56 bkl 53.52 bkl 50.94 bkl Porous silicon for the development of capacitive microstructures
topic	ddc 620 bkl 53.51 bkl 53.56 bkl 53.52 bkl 50.94
topic_unstemmed	ddc 620 bkl 53.51 bkl 53.56 bkl 53.52 bkl 50.94
topic_browse	ddc 620 bkl 53.51 bkl 53.56 bkl 53.52 bkl 50.94
format_facet	Aufsätze Gedruckte Aufsätze
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	nc
author2_variant	f a fa f g fg
hierarchy_parent_title	Microelectronic engineering
hierarchy_parent_id	130400688
dewey-tens	620 - Engineering
hierarchy_top_title	Microelectronic engineering
isfreeaccess_txt	false
familylinks_str_mv	(DE-627)130400688 (DE-600)605230-7 (DE-576)015903680
title	Porous silicon for the development of capacitive microstructures
ctrlnum	(DE-627)OLC1865337668 (DE-599)GBVOLC1865337668
title_full	Porous silicon for the development of capacitive microstructures
author_sort	Sancho, A.
journal	Microelectronic engineering
journalStr	Microelectronic engineering
isOA_bool	false
dewey-hundreds	600 - Technology
recordtype	marc
publishDateSort	2009
contenttype_str_mv	txt
container_start_page	2144
author_browse	Sancho, A.
container_volume	86
physical	5
class	620 53.51 bkl 53.56 bkl 53.52 bkl 50.94 bkl
format_se	Aufsätze
author-letter	Sancho, A.
dewey-full	620
title_sort	porous silicon for the development of capacitive microstructures
title_auth	Porous silicon for the development of capacitive microstructures
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_32 GBV_ILN_70 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_4316
container_issue	11
title_short	Porous silicon for the development of capacitive microstructures
remote_bool	false
author2	Arizti, F. Gracia, F.J.
author2Str	Arizti, F. Gracia, F.J.
ppnlink	130400688
mediatype_str_mv	n
isOA_txt	false
hochschulschrift_bool	false
author2_role	oth oth
up_date	2024-07-03T17:57:11.169Z
_version_	1803581580827951104
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC1865337668</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220221201843.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">110329s2009 xx \|\|\|\|\| 00\| \|\|und c</controlfield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">sw110327_1</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1865337668</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1865337668</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">620</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.51</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.56</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.52</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">50.94</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Sancho, A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Porous silicon for the development of capacitive microstructures</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2009</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">5</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Arizti, F.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Gracia, F.J.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Microelectronic engineering</subfield><subfield code="d">Amsterdam [u.a.] : Elsevier, 1983</subfield><subfield code="g">86(2009), 11 vom: Nov., Seite 2144-2149</subfield><subfield code="w">(DE-627)130400688</subfield><subfield code="w">(DE-600)605230-7</subfield><subfield code="w">(DE-576)015903680</subfield><subfield code="x">0167-9317</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:86</subfield><subfield code="g">year:2009</subfield><subfield code="g">number:11</subfield><subfield code="g">month:11</subfield><subfield code="g">pages:2144-2149</subfield><subfield code="g">extent:5</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2002</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4316</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">53.51</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">53.56</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">53.52</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">50.94</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">86</subfield><subfield code="j">2009</subfield><subfield code="e">11</subfield><subfield code="c">11</subfield><subfield code="h">2144-2149</subfield><subfield code="g">5</subfield></datafield></record></collection>
score	7.4004374

Nicht das Richtige dabei?

Schreiben Sie uns!

Porous silicon for the development of capacitive microstructures

Nicht das Richtige dabei?

Zugang & Verfügbarkeit

Vorhandene Bände

Nicht das Richtige dabei?