Impact of electrostatics and doping concentration on the performance of silicon tunnel field-effect transistors

Gespeichert in:

Autor*in:	Sandow, C. [verfasserIn] Knoch, J. Urban, C. Zhao, Q.-T. Mantl, S.

Format:	Artikel

Erschienen:	2009

Umfang:	4

Übergeordnetes Werk:	Enthalten in: Solid state electronics - Amsterdam [u.a.] : Elsevier, 1960, 53(2009), 10 vom: Okt., Seite 1126-1130
Übergeordnetes Werk:	volume:53 ; year:2009 ; number:10 ; month:10 ; pages:1126-1130 ; extent:4

Katalog-ID:	OLC1866485571

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Impact of electrostatics and doping concentration on the performance of silicon tunnel field-effect transistors

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