Room-temperature red emission from light-emitting diodes with Eu-doped GaN grown by organometallic vapor phase epitaxy

Gespeichert in:

Autor*in:	Nishikawa, A. [verfasserIn] Furukawa, N. Kawasaki, T. Terai, Y. Fujiwara, Y.

Format:	Artikel

Erschienen:	2011

Umfang:	4

Übergeordnetes Werk:	Enthalten in: Optical materials - Amsterdam [u.a.] : North-Holland, 1992, 33(2011), 7 vom: Mai, Seite 1071-1075
Übergeordnetes Werk:	volume:33 ; year:2011 ; number:7 ; month:05 ; pages:1071-1075 ; extent:4

Katalog-ID:	OLC1868229491

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allfields	sw110424_1 (DE-627)OLC1868229491 (DE-599)GBVOLC1868229491 DE-627 ger DE-627 rakwb 530 620 670 Nishikawa, A. verfasserin aut Room-temperature red emission from light-emitting diodes with Eu-doped GaN grown by organometallic vapor phase epitaxy 2011 4 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Furukawa, N. oth Kawasaki, T. oth Terai, Y. oth Fujiwara, Y. oth Enthalten in Optical materials Amsterdam [u.a.] : North-Holland, 1992 33(2011), 7 vom: Mai, Seite 1071-1075 (DE-627)131056336 (DE-600)1105129-2 (DE-576)038688190 0925-3467 nnns volume:33 year:2011 number:7 month:05 pages:1071-1075 extent:4 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_70 AR 33 2011 7 5 1071-1075 4
spelling	sw110424_1 (DE-627)OLC1868229491 (DE-599)GBVOLC1868229491 DE-627 ger DE-627 rakwb 530 620 670 Nishikawa, A. verfasserin aut Room-temperature red emission from light-emitting diodes with Eu-doped GaN grown by organometallic vapor phase epitaxy 2011 4 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Furukawa, N. oth Kawasaki, T. oth Terai, Y. oth Fujiwara, Y. oth Enthalten in Optical materials Amsterdam [u.a.] : North-Holland, 1992 33(2011), 7 vom: Mai, Seite 1071-1075 (DE-627)131056336 (DE-600)1105129-2 (DE-576)038688190 0925-3467 nnns volume:33 year:2011 number:7 month:05 pages:1071-1075 extent:4 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_70 AR 33 2011 7 5 1071-1075 4
allfields_unstemmed	sw110424_1 (DE-627)OLC1868229491 (DE-599)GBVOLC1868229491 DE-627 ger DE-627 rakwb 530 620 670 Nishikawa, A. verfasserin aut Room-temperature red emission from light-emitting diodes with Eu-doped GaN grown by organometallic vapor phase epitaxy 2011 4 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Furukawa, N. oth Kawasaki, T. oth Terai, Y. oth Fujiwara, Y. oth Enthalten in Optical materials Amsterdam [u.a.] : North-Holland, 1992 33(2011), 7 vom: Mai, Seite 1071-1075 (DE-627)131056336 (DE-600)1105129-2 (DE-576)038688190 0925-3467 nnns volume:33 year:2011 number:7 month:05 pages:1071-1075 extent:4 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_70 AR 33 2011 7 5 1071-1075 4
allfieldsGer	sw110424_1 (DE-627)OLC1868229491 (DE-599)GBVOLC1868229491 DE-627 ger DE-627 rakwb 530 620 670 Nishikawa, A. verfasserin aut Room-temperature red emission from light-emitting diodes with Eu-doped GaN grown by organometallic vapor phase epitaxy 2011 4 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Furukawa, N. oth Kawasaki, T. oth Terai, Y. oth Fujiwara, Y. oth Enthalten in Optical materials Amsterdam [u.a.] : North-Holland, 1992 33(2011), 7 vom: Mai, Seite 1071-1075 (DE-627)131056336 (DE-600)1105129-2 (DE-576)038688190 0925-3467 nnns volume:33 year:2011 number:7 month:05 pages:1071-1075 extent:4 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_70 AR 33 2011 7 5 1071-1075 4
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