Ti-Si-C-N thin films grown by reactive arc evaporation from Ti3SiC2 cathodes

Gespeichert in:

Autor*in:	Eriksson, Anders O [verfasserIn] Zhu, Jianqiang Ghafoor, Naureen Jensen, Jens Greczynski, Grzegorz Johansson, Mats P Sjölen, Jacob Odén, Magnus Hultman, Lars Rosén, Johanna

Format:	Artikel

Erschienen:	2011

Systematik:	VA 5350

Umfang:	8

Übergeordnetes Werk:	Enthalten in: Journal of materials research - Warrendale, Pa. : Materials Research Society, 1986, 26(2011), 7, Seite 874-882
Übergeordnetes Werk:	volume:26 ; year:2011 ; number:7 ; pages:874-882 ; extent:8

Katalog-ID:	OLC1869936884

Internformat


LEADER	01000caa a22002652 4500
001	OLC1869936884
003	DE-627
005	20220221205419.0
007	tu
008	110523s2011 xx \|\|\|\|\| 00\| \|\|und c
028	5	2	\|a sw110521_1
035			\|a (DE-627)OLC1869936884
035			\|a (DE-599)GBVOLC1869936884
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
082	0	4	\|a 670
084			\|a VA 5350 \|q AVZ \|2 rvk
084			\|a 51.00 \|2 bkl
100	1		\|a Eriksson, Anders O \|e verfasserin \|4 aut
245	1	0	\|a Ti-Si-C-N thin films grown by reactive arc evaporation from Ti3SiC2 cathodes
264		1	\|c 2011
300			\|a 8
336			\|a Text \|b txt \|2 rdacontent
337			\|a ohne Hilfsmittel zu benutzen \|b n \|2 rdamedia
338			\|a Band \|b nc \|2 rdacarrier
700	1		\|a Zhu, Jianqiang \|4 oth
700	1		\|a Ghafoor, Naureen \|4 oth
700	1		\|a Jensen, Jens \|4 oth
700	1		\|a Greczynski, Grzegorz \|4 oth
700	1		\|a Johansson, Mats P \|4 oth
700	1		\|a Sjölen, Jacob \|4 oth
700	1		\|a Odén, Magnus \|4 oth
700	1		\|a Hultman, Lars \|4 oth
700	1		\|a Rosén, Johanna \|4 oth
773	0	8	\|i Enthalten in \|t Journal of materials research \|d Warrendale, Pa. : Materials Research Society, 1986 \|g 26(2011), 7, Seite 874-882 \|w (DE-627)129206288 \|w (DE-600)54876-5 \|w (DE-576)01445744X \|x 0884-2914 \|7 nnns
773	1	8	\|g volume:26 \|g year:2011 \|g number:7 \|g pages:874-882 \|g extent:8
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_OLC
912			\|a SSG-OLC-TEC
912			\|a GBV_ILN_21
912			\|a GBV_ILN_23
912			\|a GBV_ILN_24
912			\|a GBV_ILN_31
912			\|a GBV_ILN_40
912			\|a GBV_ILN_70
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_4126
912			\|a GBV_ILN_4306
912			\|a GBV_ILN_4319
912			\|a GBV_ILN_4323
936	r	v	\|a VA 5350
936	b	k	\|a 51.00 \|q AVZ
951			\|a AR
952			\|d 26 \|j 2011 \|e 7 \|h 874-882 \|g 8

Indexfelder

author_variant	a o e ao aoe
matchkey_str	article:08842914:2011----::iinhnimgonyeciereaoain
hierarchy_sort_str	2011
bklnumber	51.00
publishDate	2011
allfields	sw110521_1 (DE-627)OLC1869936884 (DE-599)GBVOLC1869936884 DE-627 ger DE-627 rakwb 670 VA 5350 AVZ rvk 51.00 bkl Eriksson, Anders O verfasserin aut Ti-Si-C-N thin films grown by reactive arc evaporation from Ti3SiC2 cathodes 2011 8 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Zhu, Jianqiang oth Ghafoor, Naureen oth Jensen, Jens oth Greczynski, Grzegorz oth Johansson, Mats P oth Sjölen, Jacob oth Odén, Magnus oth Hultman, Lars oth Rosén, Johanna oth Enthalten in Journal of materials research Warrendale, Pa. : Materials Research Society, 1986 26(2011), 7, Seite 874-882 (DE-627)129206288 (DE-600)54876-5 (DE-576)01445744X 0884-2914 nnns volume:26 year:2011 number:7 pages:874-882 extent:8 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2020 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4319 GBV_ILN_4323 VA 5350 51.00 AVZ AR 26 2011 7 874-882 8
spelling	sw110521_1 (DE-627)OLC1869936884 (DE-599)GBVOLC1869936884 DE-627 ger DE-627 rakwb 670 VA 5350 AVZ rvk 51.00 bkl Eriksson, Anders O verfasserin aut Ti-Si-C-N thin films grown by reactive arc evaporation from Ti3SiC2 cathodes 2011 8 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Zhu, Jianqiang oth Ghafoor, Naureen oth Jensen, Jens oth Greczynski, Grzegorz oth Johansson, Mats P oth Sjölen, Jacob oth Odén, Magnus oth Hultman, Lars oth Rosén, Johanna oth Enthalten in Journal of materials research Warrendale, Pa. : Materials Research Society, 1986 26(2011), 7, Seite 874-882 (DE-627)129206288 (DE-600)54876-5 (DE-576)01445744X 0884-2914 nnns volume:26 year:2011 number:7 pages:874-882 extent:8 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2020 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4319 GBV_ILN_4323 VA 5350 51.00 AVZ AR 26 2011 7 874-882 8
allfields_unstemmed	sw110521_1 (DE-627)OLC1869936884 (DE-599)GBVOLC1869936884 DE-627 ger DE-627 rakwb 670 VA 5350 AVZ rvk 51.00 bkl Eriksson, Anders O verfasserin aut Ti-Si-C-N thin films grown by reactive arc evaporation from Ti3SiC2 cathodes 2011 8 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Zhu, Jianqiang oth Ghafoor, Naureen oth Jensen, Jens oth Greczynski, Grzegorz oth Johansson, Mats P oth Sjölen, Jacob oth Odén, Magnus oth Hultman, Lars oth Rosén, Johanna oth Enthalten in Journal of materials research Warrendale, Pa. : Materials Research Society, 1986 26(2011), 7, Seite 874-882 (DE-627)129206288 (DE-600)54876-5 (DE-576)01445744X 0884-2914 nnns volume:26 year:2011 number:7 pages:874-882 extent:8 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2020 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4319 GBV_ILN_4323 VA 5350 51.00 AVZ AR 26 2011 7 874-882 8
allfieldsGer	sw110521_1 (DE-627)OLC1869936884 (DE-599)GBVOLC1869936884 DE-627 ger DE-627 rakwb 670 VA 5350 AVZ rvk 51.00 bkl Eriksson, Anders O verfasserin aut Ti-Si-C-N thin films grown by reactive arc evaporation from Ti3SiC2 cathodes 2011 8 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Zhu, Jianqiang oth Ghafoor, Naureen oth Jensen, Jens oth Greczynski, Grzegorz oth Johansson, Mats P oth Sjölen, Jacob oth Odén, Magnus oth Hultman, Lars oth Rosén, Johanna oth Enthalten in Journal of materials research Warrendale, Pa. : Materials Research Society, 1986 26(2011), 7, Seite 874-882 (DE-627)129206288 (DE-600)54876-5 (DE-576)01445744X 0884-2914 nnns volume:26 year:2011 number:7 pages:874-882 extent:8 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2020 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4319 GBV_ILN_4323 VA 5350 51.00 AVZ AR 26 2011 7 874-882 8
allfieldsSound	sw110521_1 (DE-627)OLC1869936884 (DE-599)GBVOLC1869936884 DE-627 ger DE-627 rakwb 670 VA 5350 AVZ rvk 51.00 bkl Eriksson, Anders O verfasserin aut Ti-Si-C-N thin films grown by reactive arc evaporation from Ti3SiC2 cathodes 2011 8 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Zhu, Jianqiang oth Ghafoor, Naureen oth Jensen, Jens oth Greczynski, Grzegorz oth Johansson, Mats P oth Sjölen, Jacob oth Odén, Magnus oth Hultman, Lars oth Rosén, Johanna oth Enthalten in Journal of materials research Warrendale, Pa. : Materials Research Society, 1986 26(2011), 7, Seite 874-882 (DE-627)129206288 (DE-600)54876-5 (DE-576)01445744X 0884-2914 nnns volume:26 year:2011 number:7 pages:874-882 extent:8 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2020 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4319 GBV_ILN_4323 VA 5350 51.00 AVZ AR 26 2011 7 874-882 8
source	Enthalten in Journal of materials research 26(2011), 7, Seite 874-882 volume:26 year:2011 number:7 pages:874-882 extent:8
sourceStr	Enthalten in Journal of materials research 26(2011), 7, Seite 874-882 volume:26 year:2011 number:7 pages:874-882 extent:8
format_phy_str_mv	Article
institution	findex.gbv.de
dewey-raw	670
isfreeaccess_bool	false
container_title	Journal of materials research
authorswithroles_txt_mv	Eriksson, Anders O @@aut@@ Zhu, Jianqiang @@oth@@ Ghafoor, Naureen @@oth@@ Jensen, Jens @@oth@@ Greczynski, Grzegorz @@oth@@ Johansson, Mats P @@oth@@ Sjölen, Jacob @@oth@@ Odén, Magnus @@oth@@ Hultman, Lars @@oth@@ Rosén, Johanna @@oth@@
publishDateDaySort_date	2011-01-01T00:00:00Z
hierarchy_top_id	129206288
dewey-sort	3670
id	OLC1869936884
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC1869936884</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220221205419.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">110523s2011 xx \|\|\|\|\| 00\| \|\|und c</controlfield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">sw110521_1</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1869936884</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1869936884</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">VA 5350</subfield><subfield code="q">AVZ</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">51.00</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Eriksson, Anders O</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Ti-Si-C-N thin films grown by reactive arc evaporation from Ti3SiC2 cathodes</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2011</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">8</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zhu, Jianqiang</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ghafoor, Naureen</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Jensen, Jens</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Greczynski, Grzegorz</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Johansson, Mats P</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sjölen, Jacob</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Odén, Magnus</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hultman, Lars</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Rosén, Johanna</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of materials research</subfield><subfield code="d">Warrendale, Pa. : Materials Research Society, 1986</subfield><subfield code="g">26(2011), 7, Seite 874-882</subfield><subfield code="w">(DE-627)129206288</subfield><subfield code="w">(DE-600)54876-5</subfield><subfield code="w">(DE-576)01445744X</subfield><subfield code="x">0884-2914</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:26</subfield><subfield code="g">year:2011</subfield><subfield code="g">number:7</subfield><subfield code="g">pages:874-882</subfield><subfield code="g">extent:8</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_21</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4319</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="936" ind1="r" ind2="v"><subfield code="a">VA 5350</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">51.00</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">26</subfield><subfield code="j">2011</subfield><subfield code="e">7</subfield><subfield code="h">874-882</subfield><subfield code="g">8</subfield></datafield></record></collection>
author	Eriksson, Anders O
spellingShingle	Eriksson, Anders O ddc 670 rvk VA 5350 bkl 51.00 Ti-Si-C-N thin films grown by reactive arc evaporation from Ti3SiC2 cathodes
authorStr	Eriksson, Anders O
ppnlink_with_tag_str_mv	@@773@@(DE-627)129206288
format	Article
dewey-ones	670 - Manufacturing
delete_txt_mv	keep
author_role	aut
collection	OLC
remote_str	false
illustrated	Not Illustrated
issn	0884-2914
topic_title	670 VA 5350 AVZ rvk 51.00 bkl Ti-Si-C-N thin films grown by reactive arc evaporation from Ti3SiC2 cathodes
topic	ddc 670 rvk VA 5350 bkl 51.00
topic_unstemmed	ddc 670 rvk VA 5350 bkl 51.00
topic_browse	ddc 670 rvk VA 5350 bkl 51.00
format_facet	Aufsätze Gedruckte Aufsätze
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	nc
author2_variant	j z jz n g ng j j jj g g gg m p j mp mpj j s js m o mo l h lh j r jr
hierarchy_parent_title	Journal of materials research
hierarchy_parent_id	129206288
dewey-tens	670 - Manufacturing
hierarchy_top_title	Journal of materials research
isfreeaccess_txt	false
familylinks_str_mv	(DE-627)129206288 (DE-600)54876-5 (DE-576)01445744X
title	Ti-Si-C-N thin films grown by reactive arc evaporation from Ti3SiC2 cathodes
ctrlnum	(DE-627)OLC1869936884 (DE-599)GBVOLC1869936884
title_full	Ti-Si-C-N thin films grown by reactive arc evaporation from Ti3SiC2 cathodes
author_sort	Eriksson, Anders O
journal	Journal of materials research
journalStr	Journal of materials research
isOA_bool	false
dewey-hundreds	600 - Technology
recordtype	marc
publishDateSort	2011
contenttype_str_mv	txt
container_start_page	874
author_browse	Eriksson, Anders O
container_volume	26
physical	8
class	670 VA 5350 AVZ rvk 51.00 bkl
format_se	Aufsätze
author-letter	Eriksson, Anders O
dewey-full	670
title_sort	ti-si-c-n thin films grown by reactive arc evaporation from ti3sic2 cathodes
title_auth	Ti-Si-C-N thin films grown by reactive arc evaporation from Ti3SiC2 cathodes
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2020 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4319 GBV_ILN_4323
container_issue	7
title_short	Ti-Si-C-N thin films grown by reactive arc evaporation from Ti3SiC2 cathodes
remote_bool	false
author2	Zhu, Jianqiang Ghafoor, Naureen Jensen, Jens Greczynski, Grzegorz Johansson, Mats P Sjölen, Jacob Odén, Magnus Hultman, Lars Rosén, Johanna
author2Str	Zhu, Jianqiang Ghafoor, Naureen Jensen, Jens Greczynski, Grzegorz Johansson, Mats P Sjölen, Jacob Odén, Magnus Hultman, Lars Rosén, Johanna
ppnlink	129206288
mediatype_str_mv	n
isOA_txt	false
hochschulschrift_bool	false
author2_role	oth oth oth oth oth oth oth oth oth
up_date	2024-07-03T15:44:17.390Z
_version_	1803573219702079488
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC1869936884</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220221205419.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">110523s2011 xx \|\|\|\|\| 00\| \|\|und c</controlfield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">sw110521_1</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1869936884</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1869936884</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">VA 5350</subfield><subfield code="q">AVZ</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">51.00</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Eriksson, Anders O</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Ti-Si-C-N thin films grown by reactive arc evaporation from Ti3SiC2 cathodes</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2011</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">8</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zhu, Jianqiang</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ghafoor, Naureen</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Jensen, Jens</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Greczynski, Grzegorz</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Johansson, Mats P</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sjölen, Jacob</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Odén, Magnus</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hultman, Lars</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Rosén, Johanna</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of materials research</subfield><subfield code="d">Warrendale, Pa. : Materials Research Society, 1986</subfield><subfield code="g">26(2011), 7, Seite 874-882</subfield><subfield code="w">(DE-627)129206288</subfield><subfield code="w">(DE-600)54876-5</subfield><subfield code="w">(DE-576)01445744X</subfield><subfield code="x">0884-2914</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:26</subfield><subfield code="g">year:2011</subfield><subfield code="g">number:7</subfield><subfield code="g">pages:874-882</subfield><subfield code="g">extent:8</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_21</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4319</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="936" ind1="r" ind2="v"><subfield code="a">VA 5350</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">51.00</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">26</subfield><subfield code="j">2011</subfield><subfield code="e">7</subfield><subfield code="h">874-882</subfield><subfield code="g">8</subfield></datafield></record></collection>
score	7.3999414

Nicht das Richtige dabei?

Schreiben Sie uns!

Ti-Si-C-N thin films grown by reactive arc evaporation from Ti3SiC2 cathodes

Nicht das Richtige dabei?

Zugang & Verfügbarkeit

Vorhandene Bände

Nicht das Richtige dabei?