Efficiency Enhancement of InGaN-Based Multiple Quantum Well Solar Cells Employing Antireflective ZnO Nanorod Arrays

Gespeichert in:

Autor*in:	Lin, G J [verfasserIn] Lai, K Y Lin, C A Lai, Y-L He, J H

Format:	Artikel

Erschienen:	2011

Umfang:	3

Übergeordnetes Werk:	Enthalten in: IEEE electron device letters - New York, NY : IEEE, 1980, 32(2011), 8, Seite 1104-1107
Übergeordnetes Werk:	volume:32 ; year:2011 ; number:8 ; pages:1104-1107 ; extent:3

Katalog-ID:	OLC1876821620

Internformat


LEADER	01000caa a22002652 4500
001	OLC1876821620
003	DE-627
005	20230712171821.0
007	tu
008	110822s2011 xx \|\|\|\|\| 00\| \|\|und c
028	5	2	\|a sw110817_1
035			\|a (DE-627)OLC1876821620
035			\|a (DE-599)GBVOLC1876821620
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
082	0	4	\|a 620
100	1		\|a Lin, G J \|e verfasserin \|4 aut
245	1	0	\|a Efficiency Enhancement of InGaN-Based Multiple Quantum Well Solar Cells Employing Antireflective ZnO Nanorod Arrays
264		1	\|c 2011
300			\|a 3
336			\|a Text \|b txt \|2 rdacontent
337			\|a ohne Hilfsmittel zu benutzen \|b n \|2 rdamedia
338			\|a Band \|b nc \|2 rdacarrier
700	1		\|a Lai, K Y \|4 oth
700	1		\|a Lin, C A \|4 oth
700	1		\|a Lai, Y-L \|4 oth
700	1		\|a He, J H \|4 oth
773	0	8	\|i Enthalten in \|t IEEE electron device letters \|d New York, NY : IEEE, 1980 \|g 32(2011), 8, Seite 1104-1107 \|w (DE-627)129618993 \|w (DE-600)245158-X \|w (DE-576)015122115 \|x 0193-8576 \|7 nnns
773	1	8	\|g volume:32 \|g year:2011 \|g number:8 \|g pages:1104-1107 \|g extent:3
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_OLC
912			\|a SSG-OLC-TEC
912			\|a GBV_ILN_70
912			\|a GBV_ILN_170
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_4266
912			\|a GBV_ILN_4314
951			\|a AR
952			\|d 32 \|j 2011 \|e 8 \|h 1104-1107 \|g 3

Indexfelder

author_variant	g j l gj gjl
matchkey_str	article:01938576:2011----::fiinynacmnoignaemlilqatmeloaclsmlynat
hierarchy_sort_str	2011
publishDate	2011
allfields	sw110817_1 (DE-627)OLC1876821620 (DE-599)GBVOLC1876821620 DE-627 ger DE-627 rakwb 620 Lin, G J verfasserin aut Efficiency Enhancement of InGaN-Based Multiple Quantum Well Solar Cells Employing Antireflective ZnO Nanorod Arrays 2011 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Lai, K Y oth Lin, C A oth Lai, Y-L oth He, J H oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 32(2011), 8, Seite 1104-1107 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:32 year:2011 number:8 pages:1104-1107 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 GBV_ILN_170 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2061 GBV_ILN_4266 GBV_ILN_4314 AR 32 2011 8 1104-1107 3
spelling	sw110817_1 (DE-627)OLC1876821620 (DE-599)GBVOLC1876821620 DE-627 ger DE-627 rakwb 620 Lin, G J verfasserin aut Efficiency Enhancement of InGaN-Based Multiple Quantum Well Solar Cells Employing Antireflective ZnO Nanorod Arrays 2011 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Lai, K Y oth Lin, C A oth Lai, Y-L oth He, J H oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 32(2011), 8, Seite 1104-1107 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:32 year:2011 number:8 pages:1104-1107 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 GBV_ILN_170 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2061 GBV_ILN_4266 GBV_ILN_4314 AR 32 2011 8 1104-1107 3
allfields_unstemmed	sw110817_1 (DE-627)OLC1876821620 (DE-599)GBVOLC1876821620 DE-627 ger DE-627 rakwb 620 Lin, G J verfasserin aut Efficiency Enhancement of InGaN-Based Multiple Quantum Well Solar Cells Employing Antireflective ZnO Nanorod Arrays 2011 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Lai, K Y oth Lin, C A oth Lai, Y-L oth He, J H oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 32(2011), 8, Seite 1104-1107 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:32 year:2011 number:8 pages:1104-1107 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 GBV_ILN_170 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2061 GBV_ILN_4266 GBV_ILN_4314 AR 32 2011 8 1104-1107 3
allfieldsGer	sw110817_1 (DE-627)OLC1876821620 (DE-599)GBVOLC1876821620 DE-627 ger DE-627 rakwb 620 Lin, G J verfasserin aut Efficiency Enhancement of InGaN-Based Multiple Quantum Well Solar Cells Employing Antireflective ZnO Nanorod Arrays 2011 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Lai, K Y oth Lin, C A oth Lai, Y-L oth He, J H oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 32(2011), 8, Seite 1104-1107 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:32 year:2011 number:8 pages:1104-1107 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 GBV_ILN_170 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2061 GBV_ILN_4266 GBV_ILN_4314 AR 32 2011 8 1104-1107 3
allfieldsSound	sw110817_1 (DE-627)OLC1876821620 (DE-599)GBVOLC1876821620 DE-627 ger DE-627 rakwb 620 Lin, G J verfasserin aut Efficiency Enhancement of InGaN-Based Multiple Quantum Well Solar Cells Employing Antireflective ZnO Nanorod Arrays 2011 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Lai, K Y oth Lin, C A oth Lai, Y-L oth He, J H oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 32(2011), 8, Seite 1104-1107 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:32 year:2011 number:8 pages:1104-1107 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 GBV_ILN_170 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2061 GBV_ILN_4266 GBV_ILN_4314 AR 32 2011 8 1104-1107 3
source	Enthalten in IEEE electron device letters 32(2011), 8, Seite 1104-1107 volume:32 year:2011 number:8 pages:1104-1107 extent:3
sourceStr	Enthalten in IEEE electron device letters 32(2011), 8, Seite 1104-1107 volume:32 year:2011 number:8 pages:1104-1107 extent:3
format_phy_str_mv	Article
institution	findex.gbv.de
dewey-raw	620
isfreeaccess_bool	false
container_title	IEEE electron device letters
authorswithroles_txt_mv	Lin, G J @@aut@@ Lai, K Y @@oth@@ Lin, C A @@oth@@ Lai, Y-L @@oth@@ He, J H @@oth@@
publishDateDaySort_date	2011-01-01T00:00:00Z
hierarchy_top_id	129618993
dewey-sort	3620
id	OLC1876821620
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC1876821620</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230712171821.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">110822s2011 xx \|\|\|\|\| 00\| \|\|und c</controlfield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">sw110817_1</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1876821620</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1876821620</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">620</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Lin, G J</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Efficiency Enhancement of InGaN-Based Multiple Quantum Well Solar Cells Employing Antireflective ZnO Nanorod Arrays</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2011</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">3</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Lai, K Y</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Lin, C A</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Lai, Y-L</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">He, J H</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">IEEE electron device letters</subfield><subfield code="d">New York, NY : IEEE, 1980</subfield><subfield code="g">32(2011), 8, Seite 1104-1107</subfield><subfield code="w">(DE-627)129618993</subfield><subfield code="w">(DE-600)245158-X</subfield><subfield code="w">(DE-576)015122115</subfield><subfield code="x">0193-8576</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:32</subfield><subfield code="g">year:2011</subfield><subfield code="g">number:8</subfield><subfield code="g">pages:1104-1107</subfield><subfield code="g">extent:3</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4266</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4314</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">32</subfield><subfield code="j">2011</subfield><subfield code="e">8</subfield><subfield code="h">1104-1107</subfield><subfield code="g">3</subfield></datafield></record></collection>
author	Lin, G J
spellingShingle	Lin, G J ddc 620 Efficiency Enhancement of InGaN-Based Multiple Quantum Well Solar Cells Employing Antireflective ZnO Nanorod Arrays
authorStr	Lin, G J
ppnlink_with_tag_str_mv	@@773@@(DE-627)129618993
format	Article
dewey-ones	620 - Engineering & allied operations
delete_txt_mv	keep
author_role	aut
collection	OLC
remote_str	false
illustrated	Not Illustrated
issn	0193-8576
topic_title	620 Efficiency Enhancement of InGaN-Based Multiple Quantum Well Solar Cells Employing Antireflective ZnO Nanorod Arrays
topic	ddc 620
topic_unstemmed	ddc 620
topic_browse	ddc 620
format_facet	Aufsätze Gedruckte Aufsätze
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	nc
author2_variant	k y l ky kyl c a l ca cal y l l yll j h h jh jhh
hierarchy_parent_title	IEEE electron device letters
hierarchy_parent_id	129618993
dewey-tens	620 - Engineering
hierarchy_top_title	IEEE electron device letters
isfreeaccess_txt	false
familylinks_str_mv	(DE-627)129618993 (DE-600)245158-X (DE-576)015122115
title	Efficiency Enhancement of InGaN-Based Multiple Quantum Well Solar Cells Employing Antireflective ZnO Nanorod Arrays
ctrlnum	(DE-627)OLC1876821620 (DE-599)GBVOLC1876821620
title_full	Efficiency Enhancement of InGaN-Based Multiple Quantum Well Solar Cells Employing Antireflective ZnO Nanorod Arrays
author_sort	Lin, G J
journal	IEEE electron device letters
journalStr	IEEE electron device letters
isOA_bool	false
dewey-hundreds	600 - Technology
recordtype	marc
publishDateSort	2011
contenttype_str_mv	txt
container_start_page	1104
author_browse	Lin, G J
container_volume	32
physical	3
class	620
format_se	Aufsätze
author-letter	Lin, G J
dewey-full	620
title_sort	efficiency enhancement of ingan-based multiple quantum well solar cells employing antireflective zno nanorod arrays
title_auth	Efficiency Enhancement of InGaN-Based Multiple Quantum Well Solar Cells Employing Antireflective ZnO Nanorod Arrays
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 GBV_ILN_170 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2061 GBV_ILN_4266 GBV_ILN_4314
container_issue	8
title_short	Efficiency Enhancement of InGaN-Based Multiple Quantum Well Solar Cells Employing Antireflective ZnO Nanorod Arrays
remote_bool	false
author2	Lai, K Y Lin, C A Lai, Y-L He, J H
author2Str	Lai, K Y Lin, C A Lai, Y-L He, J H
ppnlink	129618993
mediatype_str_mv	n
isOA_txt	false
hochschulschrift_bool	false
author2_role	oth oth oth oth
up_date	2024-07-03T15:52:14.999Z
_version_	1803573720510365696
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC1876821620</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230712171821.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">110822s2011 xx \|\|\|\|\| 00\| \|\|und c</controlfield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">sw110817_1</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1876821620</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1876821620</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">620</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Lin, G J</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Efficiency Enhancement of InGaN-Based Multiple Quantum Well Solar Cells Employing Antireflective ZnO Nanorod Arrays</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2011</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">3</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Lai, K Y</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Lin, C A</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Lai, Y-L</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">He, J H</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">IEEE electron device letters</subfield><subfield code="d">New York, NY : IEEE, 1980</subfield><subfield code="g">32(2011), 8, Seite 1104-1107</subfield><subfield code="w">(DE-627)129618993</subfield><subfield code="w">(DE-600)245158-X</subfield><subfield code="w">(DE-576)015122115</subfield><subfield code="x">0193-8576</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:32</subfield><subfield code="g">year:2011</subfield><subfield code="g">number:8</subfield><subfield code="g">pages:1104-1107</subfield><subfield code="g">extent:3</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4266</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4314</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">32</subfield><subfield code="j">2011</subfield><subfield code="e">8</subfield><subfield code="h">1104-1107</subfield><subfield code="g">3</subfield></datafield></record></collection>
score	7.399106

Nicht das Richtige dabei?

Schreiben Sie uns!

Efficiency Enhancement of InGaN-Based Multiple Quantum Well Solar Cells Employing Antireflective ZnO Nanorod Arrays

Nicht das Richtige dabei?

Zugang & Verfügbarkeit

Vorhandene Bände

Nicht das Richtige dabei?