Dislocation reactions in hetero‐epitaxial (0001) GaN layers

Gespeichert in:

Autor*in:	Meng, F. Y. [verfasserIn] Mahajan, S.

Format:	Artikel

Erschienen:	2011

Umfang:	5

Übergeordnetes Werk:	Enthalten in: Physica status solidi. A, Applications and materials science - Berlin : Wiley-VCH, 1970, 208(2011), 11 vom: Nov., Seite 2666-2671
Übergeordnetes Werk:	volume:208 ; year:2011 ; number:11 ; month:11 ; pages:2666-2671 ; extent:5

Katalog-ID:	OLC1881785319

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