2 dimensional electron gas uniformity of GaN HFET layers on SiC
Gespeichert in:
| Autor*in: |
Wallis, D.J. [verfasserIn] |
|---|
| Format: |
Artikel |
|---|
| Erschienen: |
2012 |
|---|
| Umfang: |
4 |
|---|
| Übergeordnetes Werk: |
Enthalten in: Journal of crystal growth - Amsterdam [u.a.] : Elsevier, 1967, 338(2012), 1 vom: 1. Jan., Seite 125-129 |
|---|---|
| Übergeordnetes Werk: |
volume:338 ; year:2012 ; number:1 ; day:1 ; month:01 ; pages:125-129 ; extent:4 |
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