NH3-rich growth of InGaN and InGaN/GaN superlattices by NH3-based molecular beam epitaxy

Gespeichert in:

Autor*in:	Lang, J.R. [verfasserIn] Speck, J.S.

Format:	Artikel

Erschienen:	2012

Umfang:	6

Übergeordnetes Werk:	Enthalten in: Journal of crystal growth - Amsterdam [u.a.] : Elsevier, 1967, 346(2012), 1 vom: 1. Mai, Seite 50-56
Übergeordnetes Werk:	volume:346 ; year:2012 ; number:1 ; day:1 ; month:05 ; pages:50-56 ; extent:6

Katalog-ID:	OLC1893521265

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