Complementary resistive switching in tantalum oxide-based resistive memory devices

Gespeichert in:

Autor*in:	Yang, Yuchao [verfasserIn] Sheridan, Patrick Lu, Wei

Format:	Artikel

Erschienen:	2012

Umfang:	1

Übergeordnetes Werk:	Enthalten in: Applied physics letters - Melville, NY : AIP, 1962, 100(2012), 20 vom: 14. Mai, Seite 203112-203113
Übergeordnetes Werk:	volume:100 ; year:2012 ; number:20 ; day:14 ; month:05 ; pages:203112-203113 ; extent:1

Katalog-ID:	OLC1896084923

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