Parasitic bipolar impact in 32nm undoped channel Ultra-Thin BOX (UTBOX) and biased Ground Plane FDSOI high-k/metal gate technology

Gespeichert in:

Autor*in:	Fenouillet-Beranger, C. [verfasserIn] Perreau, P. Boulenc, P. Tosti, L. Barnola, S. Andrieu, F. Weber, O. Beneyton, R. Perrot, C. de Buttet, C. Abbate, F. Campidelli, Y. Pinzelli, L. Gouraud, P. Margain, A. Peru, S. Bourdelle, K.K. Nguyen, B.Y. Boedt, F. Poiroux, T. Faynot, O. Skotnicki, T. Boeuf, F.

Format:	Artikel

Erschienen:	2012

Umfang:	6

Übergeordnetes Werk:	Enthalten in: Solid state electronics - Amsterdam [u.a.] : Elsevier, 1960, 74(2012) vom: Aug., Seite 32-38
Übergeordnetes Werk:	volume:74 ; year:2012 ; month:08 ; pages:32-38 ; extent:6

Katalog-ID:	OLC1897680171

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spelling	sw120610_1 (DE-627)OLC1897680171 (DE-599)GBVOLC1897680171 DE-627 ger DE-627 rakwb 530 620 33.72 bkl 33.61 bkl 53.56 bkl 53.52 bkl Fenouillet-Beranger, C. verfasserin aut Parasitic bipolar impact in 32nm undoped channel Ultra-Thin BOX (UTBOX) and biased Ground Plane FDSOI high-k/metal gate technology 2012 6 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Perreau, P. oth Boulenc, P. oth Tosti, L. oth Barnola, S. oth Andrieu, F. oth Weber, O. oth Beneyton, R. oth Perrot, C. oth de Buttet, C. oth Abbate, F. oth Campidelli, Y. oth Pinzelli, L. oth Gouraud, P. oth Margain, A. oth Peru, S. oth Bourdelle, K.K. oth Nguyen, B.Y. oth Boedt, F. oth Poiroux, T. oth Faynot, O. oth Skotnicki, T. oth Boeuf, F. oth Enthalten in Solid state electronics Amsterdam [u.a.] : Elsevier, 1960 74(2012) vom: Aug., Seite 32-38 (DE-627)129482005 (DE-600)204574-6 (DE-576)014865149 0038-1101 nnns volume:74 year:2012 month:08 pages:32-38 extent:6 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4046 GBV_ILN_4318 GBV_ILN_4700 33.72 AVZ 33.61 AVZ 53.56 AVZ 53.52 AVZ AR 74 2012 8 32-38 6
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allfieldsGer	sw120610_1 (DE-627)OLC1897680171 (DE-599)GBVOLC1897680171 DE-627 ger DE-627 rakwb 530 620 33.72 bkl 33.61 bkl 53.56 bkl 53.52 bkl Fenouillet-Beranger, C. verfasserin aut Parasitic bipolar impact in 32nm undoped channel Ultra-Thin BOX (UTBOX) and biased Ground Plane FDSOI high-k/metal gate technology 2012 6 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Perreau, P. oth Boulenc, P. oth Tosti, L. oth Barnola, S. oth Andrieu, F. oth Weber, O. oth Beneyton, R. oth Perrot, C. oth de Buttet, C. oth Abbate, F. oth Campidelli, Y. oth Pinzelli, L. oth Gouraud, P. oth Margain, A. oth Peru, S. oth Bourdelle, K.K. oth Nguyen, B.Y. oth Boedt, F. oth Poiroux, T. oth Faynot, O. oth Skotnicki, T. oth Boeuf, F. oth Enthalten in Solid state electronics Amsterdam [u.a.] : Elsevier, 1960 74(2012) vom: Aug., Seite 32-38 (DE-627)129482005 (DE-600)204574-6 (DE-576)014865149 0038-1101 nnns volume:74 year:2012 month:08 pages:32-38 extent:6 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4046 GBV_ILN_4318 GBV_ILN_4700 33.72 AVZ 33.61 AVZ 53.56 AVZ 53.52 AVZ AR 74 2012 8 32-38 6
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title	Parasitic bipolar impact in 32nm undoped channel Ultra-Thin BOX (UTBOX) and biased Ground Plane FDSOI high-k/metal gate technology
ctrlnum	(DE-627)OLC1897680171 (DE-599)GBVOLC1897680171
title_full	Parasitic bipolar impact in 32nm undoped channel Ultra-Thin BOX (UTBOX) and biased Ground Plane FDSOI high-k/metal gate technology
author_sort	Fenouillet-Beranger, C.
journal	Solid state electronics
journalStr	Solid state electronics
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dewey-hundreds	500 - Science 600 - Technology
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publishDateSort	2012
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container_start_page	32
author_browse	Fenouillet-Beranger, C.
container_volume	74
physical	6
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format_se	Aufsätze
author-letter	Fenouillet-Beranger, C.
dewey-full	530 620
title_sort	parasitic bipolar impact in 32nm undoped channel ultra-thin box (utbox) and biased ground plane fdsoi high-k/metal gate technology
title_auth	Parasitic bipolar impact in 32nm undoped channel Ultra-Thin BOX (UTBOX) and biased Ground Plane FDSOI high-k/metal gate technology
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title_short	Parasitic bipolar impact in 32nm undoped channel Ultra-Thin BOX (UTBOX) and biased Ground Plane FDSOI high-k/metal gate technology
remote_bool	false
author2	Perreau, P. Boulenc, P. Tosti, L. Barnola, S. Andrieu, F. Weber, O. Beneyton, R. Perrot, C. de Buttet, C. Abbate, F. Campidelli, Y. Pinzelli, L. Gouraud, P. Margain, A. Peru, S. Bourdelle, K.K. Nguyen, B.Y. Boedt, F. Poiroux, T. Faynot, O. Skotnicki, T. Boeuf, F.
author2Str	Perreau, P. Boulenc, P. Tosti, L. Barnola, S. Andrieu, F. Weber, O. Beneyton, R. Perrot, C. de Buttet, C. Abbate, F. Campidelli, Y. Pinzelli, L. Gouraud, P. Margain, A. Peru, S. Bourdelle, K.K. Nguyen, B.Y. Boedt, F. Poiroux, T. Faynot, O. Skotnicki, T. Boeuf, F.
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up_date	2024-07-04T00:00:08.993Z
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