044301 n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor Modeling in Forward Body Bias Condition for Low Voltage Complementary Metal-Oxide-Semiconductor Circuits Design (4 pages)

Gespeichert in:

Autor*in:	Aoki, Hitoshi [verfasserIn] Matsuzawa, Akira

Format:	Artikel

Erschienen:	2012

Systematik:	UA 4210.

Übergeordnetes Werk:	Enthalten in: Japanese journal of applied physics. Part 1, Regular papers, brief communications & review papers - Tokyo : Ōyō Butsuri Gakkai, 1982, 51(2012), 4, 1
Übergeordnetes Werk:	volume:51 ; year:2012 ; number:4 ; supplement:1

Katalog-ID:	OLC1897851294

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title_sort	044301 n-channel metal-oxide-semiconductor field-effect transistor modeling in forward body bias condition for low voltage complementary metal-oxide-semiconductor circuits design (4 pages)
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